PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
MAX5064BATC+T

MAX5064BATC+T

Maxim Integrated

IC GATE DRVR HALF-BRIDGE 12TQFN

0

MAX4420CPA+

MAX4420CPA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8DIP

341700

MAX15013CASA+T

MAX15013CASA+T

Maxim Integrated

IC GATE DRVR HALF-BRIDGE 8SOIC

0

MAX17600ASA+

MAX17600ASA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

16224900

MAX25615AUT/V+T

MAX25615AUT/V+T

Maxim Integrated

HIGH SPEED MOSFET DRIVERS

252500

MAX4427ESA+T

MAX4427ESA+T

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

0

MAX17491GTA+

MAX17491GTA+

Maxim Integrated

IC GATE DRVR HALF-BRIDGE 8TQFN

724

MAX15025AATB+T

MAX15025AATB+T

Maxim Integrated

IC GATE DRVR LOW-SIDE 10TDFN

2442

MAX4429CPA+

MAX4429CPA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8DIP

153

MAX628MJA/883B

MAX628MJA/883B

Maxim Integrated

IC GATE DRVR LOW-SIDE 8CERDIP

32

MAX15013BASA+T

MAX15013BASA+T

Maxim Integrated

IC GATE DRVR HALF-BRIDGE 8SOIC

0

MAX5064BATC+

MAX5064BATC+

Maxim Integrated

IC GATE DRVR HALF-BRIDGE 12TQFN

3162100

MAX17601AUA+T

MAX17601AUA+T

Maxim Integrated

IC GATE DRVR LOW-SIDE 8UMAX

12500

MAX17600AUA+

MAX17600AUA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8UMAX

13723950

MAX5063CASA+T

MAX5063CASA+T

Maxim Integrated

IC GATE DRVR HALF-BRIDGE 8SOIC

0

MAX5054AATA/V+T

MAX5054AATA/V+T

Maxim Integrated

IC GATE DRVR LOW-SIDE 8TDFN

0

MAX5075AAUA+

MAX5075AAUA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8UMAX

846

MAX15013AASA+T

MAX15013AASA+T

Maxim Integrated

IC GATE DRVR HALF-BRIDGE 8SOIC

2500

MAX5056AASA+

MAX5056AASA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

16522000

MAX17603AUA+

MAX17603AUA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8UMAX

475

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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