PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
MAX5077AUD+

MAX5077AUD+

Maxim Integrated

IC GATE DRVR LOW-SIDE 14TSSOP

18026880

MAX5056BASA+

MAX5056BASA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

1501100

MAX15019BASA+T

MAX15019BASA+T

Maxim Integrated

IC GATE DRVR HALF-BRIDGE 8SOIC

0

MAX4426ESA+

MAX4426ESA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

223700

MAX17603ASA+

MAX17603ASA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

19100

MAX5064AATC+

MAX5064AATC+

Maxim Integrated

IC GATE DRVR HALF-BRIDGE 12TQFN

1631200

TSC427CPA+

TSC427CPA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8DIP

13250

MAX17601AUA+

MAX17601AUA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8UMAX

3704650

MAX15012AASA+

MAX15012AASA+

Maxim Integrated

IC GATE DRVR HALF-BRIDGE 8SOIC

831000

MAX5056BASA+T

MAX5056BASA+T

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

0

MAX4427EPA+

MAX4427EPA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8DIP

10312350

MAX5062DASA+

MAX5062DASA+

Maxim Integrated

IC GATE DRVR HALF-BRIDGE 8SOIC

2100

MAX4420EPA+

MAX4420EPA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8DIP

12804600

MAX17601ATA+T

MAX17601ATA+T

Maxim Integrated

IC GATE DRVR LOW-SIDE 8TDFN

3435

MAX15024AATB+T

MAX15024AATB+T

Maxim Integrated

IC GATE DRVR LOW-SIDE 10TDFN

3527

MAX5063CASA+

MAX5063CASA+

Maxim Integrated

IC GATE DRVR HALF-BRIDGE 8SOIC

225

MAX626CPA+

MAX626CPA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8DIP

439100

MAX626CSA+T

MAX626CSA+T

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

2306

MAX4428MJA/883B

MAX4428MJA/883B

Maxim Integrated

IC GATE DRVR LOW-SIDE 8CERDIP

50

MAX4426CSA+

MAX4426CSA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

4391500

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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