PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IR2181

IR2181

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

0

IR21064

IR21064

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 14DIP

0

IR2011STR

IR2011STR

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 8SOIC

0

IR21365JTRPBF

IR21365JTRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

AUIRS2118S

AUIRS2118S

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8SOIC

0

IR2110S

IR2110S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 16SOIC

0

IR21834STR

IR21834STR

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14SOIC

0

IR2122

IR2122

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8DIP

0

IR22141SSTRPBF

IR22141SSTRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 24SSOP

0

CHL8550CRT

CHL8550CRT

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 10DFN

0

IR21368JTRPBF

IR21368JTRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

IR2213S

IR2213S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 16SOIC

0

IR2110-1

IR2110-1

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14DIP

0

IR2118

IR2118

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8DIP

0

IR4427S

IR4427S

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE 8SOIC

0

IR3598MTR1PBF

IR3598MTR1PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 16QFN

0

IR2109STR

IR2109STR

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IR21362JPBF

IR21362JPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

IR2107STR

IR2107STR

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IR2153STR

IR2153STR

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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