PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IR2131

IR2131

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28DIP

0

IR2104S

IR2104S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

AUIRS4428S

AUIRS4428S

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE 8SOIC

0

AUIRS21281S

AUIRS21281S

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8SOIC

0

IR2154

IR2154

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

0

IR2130

IR2130

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28DIP

0

IRS2123STRPBF

IRS2123STRPBF

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8SOIC

0

IR4427STR

IR4427STR

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE 8SOIC

0

IR2151SPBF

IR2151SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IR21362J

IR21362J

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

AUIRS20302S

AUIRS20302S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

0

IR2136J

IR2136J

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

AUIRS2334S

AUIRS2334S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 20SOIC

0

IRS21858SPBF

IRS21858SPBF

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 16SOIC

0

IRS2330STRPBF

IRS2330STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

0

IR2153S

IR2153S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IR7184STRPBF

IR7184STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IRS210614STRPBF

IRS210614STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14SOIC

0

AUIRS21814S

AUIRS21814S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14SOIC

0

IR1175STR

IR1175STR

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE 20SSOP

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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