PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
LT8672IDDB#TRMPBF

LT8672IDDB#TRMPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 10DFN

361

ADP3414JRZ-REEL-AD

ADP3414JRZ-REEL-AD

Analog Devices, Inc.

DUAL BOOTSTRAPPED MOSFET DRIVER

2300

LT1162CSW#TRPBF

LT1162CSW#TRPBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 24SOIC

0

LTC4441MPMSE#PBF

LTC4441MPMSE#PBF

Analog Devices, Inc.

IC GATE DRVR LOW-SIDE 10MSOP

1171

ADUM4221-1BRIZ-RL

ADUM4221-1BRIZ-RL

Analog Devices, Inc.

ISO 1/2 BRIDGE DRV W PWM UVLO 7.

0

ADP3650JRZ

ADP3650JRZ

Analog Devices, Inc.

DUAL, BOOTSTRAPPED, 12V MOSFET D

9595

MAX15070AEUT+

MAX15070AEUT+

Analog Devices, Inc.

3A SOURCE, MOSFET DRIVER

779

MAX4427ESA

MAX4427ESA

Analog Devices, Inc.

MOSFET DRIVER

20675

LTC4440AMPMS8E-5#PBF

LTC4440AMPMS8E-5#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8MSOP

173

LTC7004MPMSE#PBF

LTC7004MPMSE#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 10MSOP

402

ADP3118JRZ-RL

ADP3118JRZ-RL

Analog Devices, Inc.

DUAL BOOTSTRAPPED 12 VOLT MOSFET

55000

LT1162ISW#TRPBF

LT1162ISW#TRPBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 24SOIC

0

ADP3634ARDZ-R7

ADP3634ARDZ-R7

Analog Devices, Inc.

HIGH SPEED, DUAL, 4 A MOSFET DRI

276

MAX5062CASA+

MAX5062CASA+

Analog Devices, Inc.

MAX5062 125V/2AMP, HIGH-SPEED, H

540

LTC4444HMS8E-5#PBF

LTC4444HMS8E-5#PBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 8MSOP

23

MAX4428ESA

MAX4428ESA

Analog Devices, Inc.

DUAL 1.5A MOSFET DRIVER

509

MAX4420ESA

MAX4420ESA

Analog Devices, Inc.

MOSFET DRIVER

6585

LT1161ISW#TRPBF

LT1161ISW#TRPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 20SOIC

5627

MXT429CPA

MXT429CPA

Analog Devices, Inc.

6A SINGLE MOSFET DRIVER

1211

LTC1163CN8#PBF

LTC1163CN8#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8DIP

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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