PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
LT1910IS8#PBF

LT1910IS8#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8SOIC

4356

LTC7000IMSE-1#PBF

LTC7000IMSE-1#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 16MSOP

0

MAX5048AAUT

MAX5048AAUT

Analog Devices, Inc.

7.6A, 12NS, TDFN, MOSFET DRIVER

0

LT8672EMS#TRPBF

LT8672EMS#TRPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 10MSOP

0

LTC1165CN8#PBF

LTC1165CN8#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8DIP

512

ADP3634ARDZ

ADP3634ARDZ

Analog Devices, Inc.

IC GATE DRVR LOW-SIDE 8SOIC

785

TSC427CPA

TSC427CPA

Analog Devices, Inc.

TSC427 DUAL POWER MOSFET DRIVER

1515

LTC1157CS8#TRPBF

LTC1157CS8#TRPBF

Analog Devices, Inc.

IC GATE DRVR HI/LOW SIDE 8SOIC

0

LTC4440AHMS8E-5#TRPBF

LTC4440AHMS8E-5#TRPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8MSOP

0

ADP3623ARDZ-RL

ADP3623ARDZ-RL

Analog Devices, Inc.

HIGH SPEED, DUAL, 4A INVERTING D

144

MAX5048BAUT#TG16

MAX5048BAUT#TG16

Analog Devices, Inc.

7.6A, 12NS, SOT23/TDFN MOSFET DR

65000

ADP3635ARDZ-RL

ADP3635ARDZ-RL

Analog Devices, Inc.

HIGH SPEED, DUAL, 4 AMP MOSFET D

19684

LT8672HMS#TRPBF

LT8672HMS#TRPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 10MSOP

0

LTC4444IMS8E-5#TRPBF

LTC4444IMS8E-5#TRPBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 8MSOP

0

LTC4442IMS8E#TRPBF

LTC4442IMS8E#TRPBF

Analog Devices, Inc.

HIGH SPEED SYNCHRONOUS N-CHANNEL

6

MAX8702ETP

MAX8702ETP

Analog Devices, Inc.

MAX8702 DUAL-PHASE MOSFET DRIVER

0

LT1158IN#PBF

LT1158IN#PBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 16DIP

332

LTC7003HMSE#PBF

LTC7003HMSE#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 16MSOP

124

ADP3631ARMZ-R7

ADP3631ARMZ-R7

Analog Devices, Inc.

IC GATE DRVR LOW-SIDE 8MSOP

873

LTC7003IMSE#PBF

LTC7003IMSE#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 16MSOP

449

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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