PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
TPS2835PWPR

TPS2835PWPR

Texas Instruments

HALF BRIDGE BASED MOSFET DRIVER

10000

MIC4428ZN

MIC4428ZN

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

650

2EDL23N06PJXUMA1

2EDL23N06PJXUMA1

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14DSO

5794

TSC426CBA

TSC426CBA

Analog Devices, Inc.

TSC426 DUAL POWER MOSFET DRIVER

2000

LT1166CS8#PBF

LT1166CS8#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8SOIC

344

LM5112MY/NOPB

LM5112MY/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

903

MAX5055AASA+T

MAX5055AASA+T

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

5000

IXDD630CI

IXDD630CI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO220-5

86

L6389EDTR

L6389EDTR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE HI/LO

0

ICL7667CPAZ

ICL7667CPAZ

Renesas Electronics America

ICL7667 DUAL POWER MOSFET DRIVER

291

ISL89165FRTCZ

ISL89165FRTCZ

Intersil (Renesas Electronics America)

AND GATE BASED MOSFET DRIVER

2585

UC3710DWG4

UC3710DWG4

Texas Instruments

IC GATE DRVR LOW-SIDE 16SOIC

0

LT1161ISW#PBF

LT1161ISW#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 20SOIC

6659

DGD2003S8-13

DGD2003S8-13

Zetex Semiconductors (Diodes Inc.)

IC GATE DRVR HALF-BRIDGE 8SO

3704

LM25101BMA/NOPB

LM25101BMA/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

0

TD310ID

TD310ID

STMicroelectronics

IC GATE DRVR LOW-SIDE 16SO

0

MIC4427YM

MIC4427YM

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

3292

UC2715DP

UC2715DP

BUFFER/INVERTER MOSFET DRIVER

23000

MIC4422YM

MIC4422YM

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

450

NCP81145MNTBG

NCP81145MNTBG

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR HALF-BRIDGE 8DFN

18000

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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