PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
MIC4104YML

MIC4104YML

100V HALF BRIDGE MOSFET DRIVER 3

0

1SP0635D2S1-17

1SP0635D2S1-17

Power Integrations

IC GATE DRVR HI/LOW SIDE MODULE

22

MC34151P

MC34151P

BUFFER/INVERTER MOSFET DRIVER

0

TC4422AVMF

TC4422AVMF

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DFN

394

MAX620EWN

MAX620EWN

Analog Devices, Inc.

QUAD, HIGH-SIDE MOSFET DRIVER

8695

UCC27282DRCT

UCC27282DRCT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10VSON

745

UCC37321DGNR

UCC37321DGNR

Texas Instruments

UCC37321 SINGLE 9-A HIGH SPEED L

38200

MD1821K6-G

MD1821K6-G

Roving Networks / Microchip Technology

IC GATE DRVR HALF-BRIDGE 16QFN

806

UCC27525DSDR

UCC27525DSDR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SON

0

UCC27423PE4

UCC27423PE4

Texas Instruments

BUFFER/INVERTER BASED MOSFET DRI

0

UC2708NG4

UC2708NG4

BUFFER/INVERTER BASED MOSFET DRI

0

NCP81146MNTBG

NCP81146MNTBG

MOSFET DRIVER, PDSO8

69000

TC4467EPD

TC4467EPD

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 14DIP

0

MIC4423YM-TR

MIC4423YM-TR

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

2221

2SJ589LS

2SJ589LS

POWER MOSFET MOTOR DRIVERS

27672

SLG55021-200010VTR

SLG55021-200010VTR

Dialog Semiconductor

IC GATE DRVR HIGH-SIDE 8TDFN

28208

LM5109BMA

LM5109BMA

Texas Instruments

HALF BRIDGE BASED MOSFET DRIVER,

7270

LM5114AMF/NOPB

LM5114AMF/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

260

MIC4427CM

MIC4427CM

Roving Networks / Microchip Technology

LOW-SIDE MOSFET DRIVER

1881

MAX1614EUA+T

MAX1614EUA+T

Maxim Integrated

IC GATE DRVR HIGH-SIDE 8UMAX

16240

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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