PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
ADP3611MNR2G

ADP3611MNR2G

BUFFER/INVERTER MOSFET DRIVER

65796

TC1413NEUA713

TC1413NEUA713

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8MSOP

0

IR21084SPBF

IR21084SPBF

IR (Infineon Technologies)

HALF-BRIDGE BASED MOSFET DRIVER

3027

UCC27201D

UCC27201D

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

202

ISL6608CBZ

ISL6608CBZ

Intersil (Renesas Electronics America)

HALF BRIDGE BASED MOSFET DRIVER,

967

TC4627EOE713

TC4627EOE713

Roving Networks / Microchip Technology

IC GATE DRVR HI/LOW SIDE 16SOIC

0

ADP3121JCPZ-RL

ADP3121JCPZ-RL

DUAL MOSFET DRIVER

137367

MIC4423BWMTR

MIC4423BWMTR

Roving Networks / Microchip Technology

DUAL 3A-PEAK LOW-SIDE MOSFET DRI

3700

DGD2108S8-13

DGD2108S8-13

Zetex Semiconductors (Diodes Inc.)

IC GATE DRVR HALF-BRIDGE 8SO

0

MIC4428ZM-TR

MIC4428ZM-TR

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

1377

TPIC46L01DBR

TPIC46L01DBR

Texas Instruments

IC GATE DRVR LOW-SIDE 28SSOP

0

UCC27200ADRMT

UCC27200ADRMT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8VSON

483

ISL6613AEIB

ISL6613AEIB

Intersil (Renesas Electronics America)

HALF BRIDGE BASED MOSFET DRIVER

975

LM27222M/NOPB

LM27222M/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

196

2EDF7275FXUMA2

2EDF7275FXUMA2

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDG DSO16

0

FAN7171MX-F085

FAN7171MX-F085

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR HIGH-SIDE 8SOIC

3474

TC4426EPA

TC4426EPA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

279

LT1160IS#PBF

LT1160IS#PBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 14SOIC

6

TC1427VPA

TC1427VPA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

43

LTC4441EMSE#PBF

LTC4441EMSE#PBF

Analog Devices, Inc.

IC GATE DRVR LOW-SIDE 10MSOP

26

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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