PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
1EDN7511BXUSA1

1EDN7511BXUSA1

IR (Infineon Technologies)

IC GATE DRV HALF BRD/LOW SOT23-6

2551

TPS2817DBVR

TPS2817DBVR

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

2881

UCC27424QDGNRQ1

UCC27424QDGNRQ1

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

MIC4423YWM-TR

MIC4423YWM-TR

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 16SOIC

1000

UCC27523DGN

UCC27523DGN

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

630

TPS2812DR

TPS2812DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

4378

ICL7667CTV

ICL7667CTV

DUAL POWER MOSFET DRIVER

8709

MIC4606-1YTS-T5

MIC4606-1YTS-T5

Roving Networks / Microchip Technology

IC GATE DRVR FULL-BRIDGE 16TSSOP

372

IRS2181STRPBF

IRS2181STRPBF

IR (Infineon Technologies)

IRS2181 - GATE DRIVER

184

2SC0650P2A0-17

2SC0650P2A0-17

Power Integrations

IC GATE DRVR HI/LOW SIDE MODULE

41

MAX4427CSA

MAX4427CSA

Analog Devices, Inc.

MOSFET DRIVER

3573

MAX8552ETB+T

MAX8552ETB+T

Analog Devices, Inc.

MAX8552 HIGH-SPEED, WIDE-INPUT,

2100

UCC27322DRG4

UCC27322DRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

ISL83204AIBZ

ISL83204AIBZ

Intersil (Renesas Electronics America)

FULL BRIDGE BASED MOSFET DRIVER,

1662

FAN3223TMPX

FAN3223TMPX

FULL BRIDGE BASED PERIPHERAL DRI

75467

RAJ20660AGNP#HA0

RAJ20660AGNP#HA0

Renesas Electronics America

HALF BRIDGE BASED MOSFET DRIVER

6000

MIC4604YM-T5

MIC4604YM-T5

Roving Networks / Microchip Technology

IC GATE DRVR HALF-BRIDGE 8SOIC

86

2ED21064S06JXUMA1

2ED21064S06JXUMA1

IR (Infineon Technologies)

IC GATE DRIVER DSO-14

2410

NCP81382MNTXG

NCP81382MNTXG

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR HI/LOW SIDE 36QFN

2500

TPS51604QDSGRQ1

TPS51604QDSGRQ1

Texas Instruments

SYNCHRONOUS BUCK FET DRIVER FOR

2832

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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