PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IR2184PBF

IR2184PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

1801

MP18021HQ-A-LF-Z

MP18021HQ-A-LF-Z

MPS (Monolithic Power Systems)

IC GATE DRVR HALF-BRIDGE 8QFN

0

MCP14A0304-E/MNY

MCP14A0304-E/MNY

Roving Networks / Microchip Technology

IC GATE DRVR HI/LOW SIDE 8TDFN

0

TPS2831D

TPS2831D

Texas Instruments

TPS2831 INVERTING FAST SYNCHRONO

8650

ISL6614CRZR5238

ISL6614CRZR5238

Intersil (Renesas Electronics America)

IC DRVR DUAL SYNC BUCK 16-QFN

1080

MAX5062AASA+

MAX5062AASA+

Analog Devices, Inc.

MAX5062 125V/2AMP, HIGH-SPEED, H

10000

MAX4428CSA

MAX4428CSA

Analog Devices, Inc.

DUAL 1.5A MOSFET DRIVER

1209

FAN3224CMPX

FAN3224CMPX

FULL BRIDGE BASED PERIPHERAL DRI

16658

2SD300C17A2

2SD300C17A2

Power Integrations

IC GATE DRVR HALF-BRIDGE MODULE

72

IRS2101PBF

IRS2101PBF

IR (Infineon Technologies)

IC GATE DRV HI-SIDE/LO-SIDE 8DIP

224

2EDN7524GXTMA1

2EDN7524GXTMA1

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE 8WSON

0

LTC1693-2IS8#PBF

LTC1693-2IS8#PBF

Analog Devices, Inc.

IC GATE DRVR HI/LOW SIDE 8SOIC

1323

R2J20604NP#13

R2J20604NP#13

Renesas Electronics America

HALF BRIDGE BASED MOSFET DRIVER

109

LM5114BSDX/NOPB

LM5114BSDX/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 6WSON

0

ISL6610CRZ-T

ISL6610CRZ-T

Intersil (Renesas Electronics America)

BUFFER/INVERTER MOSFET DRIVER

6000

LM5101BMA

LM5101BMA

HALF BRIDGE BASED MOSFET DRIVER,

0

2DMB51507CC

2DMB51507CC

Tamura

GATE DRIVER (+15V,-15V)

104

NCP5355DG

NCP5355DG

HALF BRIDGE BASED MOSFET DRIVER

1886

ISL2111ARTZ

ISL2111ARTZ

Intersil (Renesas Electronics America)

IC GATE DRVR HALF-BRIDGE 10TDFN

1575

IXDN614SI

IXDN614SI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

2561

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

RFQ BOM Call Skype Email
Top