PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
UCC21222D

UCC21222D

Texas Instruments

IC GATE DRVR HALF-BRIDGE 16SOIC

130

UC3709NG4

UC3709NG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

0

HIP4080AIBZT

HIP4080AIBZT

Intersil (Renesas Electronics America)

IC GATE DRVR HALF-BRIDGE 20SOIC

0

IR2101PBF

IR2101PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

1528

LM27222M-TI

LM27222M-TI

Texas Instruments

HALF BRIDGE BASED MOSFET DRIVER,

16815

NCP81063MNTXG

NCP81063MNTXG

TWO TERMINAL VOLTAGE REFERENCE

17378

LTC7000EMSE-1#PBF

LTC7000EMSE-1#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 16MSOP

407

IRS2103SPBF

IRS2103SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

1

IR2112STRPBF

IR2112STRPBF

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 16SOIC

4

MCP14A0305T-E/MS

MCP14A0305T-E/MS

Roving Networks / Microchip Technology

IC GATE DRVR HI/LOW SIDE 8MSOP

2352

UCD7201PWP

UCD7201PWP

Texas Instruments

IC GATE DRVR LOW-SIDE 14HTSSOP

199

MAX15070AAUT/V+T

MAX15070AAUT/V+T

Maxim Integrated

7A SINK, 3A SOURCE, 12NS, SOT23

32500

EL7154CSZ-T13

EL7154CSZ-T13

Intersil (Renesas Electronics America)

IC GATE DRVR HI/LOW SIDE 8SOIC

0

TC4429MJA

TC4429MJA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8CERDIP

9

MCP14628T-E/SN

MCP14628T-E/SN

Roving Networks / Microchip Technology

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IR2233SPBF

IR2233SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

1846

IR21365SPBF

IR21365SPBF

IR (Infineon Technologies)

3-PHASE BRIDGE DRIVER

9500

UCC27211ADRMT

UCC27211ADRMT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8VSON

8095

ISL6610ACBZ

ISL6610ACBZ

Intersil (Renesas Electronics America)

BUFFER/INVERTER MOSFET DRIVER

2216

MIC4120YME

MIC4120YME

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

2953

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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