Memory

Part Number	Description / PDF	Quantity
CAT24C04C4ATR Sanyo Semiconductor/ON Semiconductor	IC EEPROM 4KBIT I2C 4WLCSP	2147483647
N01S830HAT22IT Sanyo Semiconductor/ON Semiconductor	IC SRAM 1MBIT SPI 20MHZ 8TSSOP	0
CAT24C512WI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 512KBIT I2C 1MHZ 8SOIC	1613
NV93C46BMUW3VTBG Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1KBIT SPI 2MHZ 8UDFN	0
NV24C16DWVLT3G Sanyo Semiconductor/ON Semiconductor	IC EEPROM 16KBIT I2C 1MHZ 8SOIC	45000
CAT25010VI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1KBIT SPI 20MHZ 8SOIC	32393000
NV25640DWHFT3G Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64K SPI 10MHZ 8SOIC	0
CAV25320VE-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 32KBIT SPI 10MHZ 8SOIC	29909000
CAT24M01YI-GT3JN Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1MBIT I2C 1MHZ 8TSSOP	0
NV25010DTHFT3G Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1KBIT SPI 10MHZ 8TSSOP	45000
NV24C04DWVLT3G Sanyo Semiconductor/ON Semiconductor	IC EEPROM 4KBIT I2C 1MHZ 8SOIC	0
CAT25128XI-T2 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 128KBIT SPI 8SOIC	98
LE25U40CMDTWG Sanyo Semiconductor/ON Semiconductor	IC FLASH 4MBIT SPI 40MHZ 8SOIC	0
CAT93C46BVI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1KBIT SPI 4MHZ 8SOIC	300015000
CAT24C32HU4I-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 32KBIT I2C 1MHZ 8UDFN	0
CAV25256VE-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256KBIT SPI 8SOIC	0
LE2464CXATBG Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64KBIT I2C 6WLCSP	207810000
N64S830HAS22IT Sanyo Semiconductor/ON Semiconductor	IC SRAM 64KBIT SPI 20MHZ 8SOIC	0
CAT24C16C4ATR Sanyo Semiconductor/ON Semiconductor	IC EEPROM 16KBIT I2C 4WLCSP	2147483647
CAV24C128YE-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 128KBIT I2C 8TSSOP	1229

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)