Memory

Part Number	Description / PDF	Quantity
NV25080DWHFT3G Sanyo Semiconductor/ON Semiconductor	IC EEPROM 8KBIT SPI 10MHZ 8SOIC	0
N64S830HAT22I Sanyo Semiconductor/ON Semiconductor	IC SRAM 64KBIT SPI 20MHZ 8TSSOP	192
CAT25M02VI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 2MBIT SPI 10MHZ 8SOIC	300093000
NV24C64DWVLT3G Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64K I2C 1MHZ 8SOIC	6906
NV93C86BMUW3VTBG Sanyo Semiconductor/ON Semiconductor	IC EEPROM 16KBIT SPI 2MHZ 8UDFN	0
LE25U40CQH-AH Sanyo Semiconductor/ON Semiconductor	IC FLASH 4MBIT SPI 40MHZ 8WDFN	160026000
CAT25020YI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 2KBIT SPI 20MHZ 8TSSOP	1280
NV24C08DWVLT3G Sanyo Semiconductor/ON Semiconductor	IC EEPROM 8KBIT I2C 1MHZ 8SOIC	200457000
LE25U40CMC-AH Sanyo Semiconductor/ON Semiconductor	IC FLASH 4MBIT SPI 40MHZ 8SOPJ	22
N21C21ASNDT3G Sanyo Semiconductor/ON Semiconductor	IC EPROM 1KBIT 1-WIRE SOT23-3	0
CAT24C08WI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 8KBIT I2C 400KHZ 8SOIC	4231
CAT24C16HU4I-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 16KBIT I2C 8UDFN	1278177000
LE25S20FD-AH Sanyo Semiconductor/ON Semiconductor	IC FLASH 2MBIT SPI 40MHZ 8VSOIC	2606
CAT25160YI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 16KBIT SPI 8TSSOP	677024000
CAT25256VI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256KBIT SPI 8SOIC	8759
CAT25256YI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256KBIT SPI 8TSSOP	19898
NV24M01MUW3VTBG Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1MBIT I2C 1MHZ 8UDFN	0
CAT24C256WI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256KBIT I2C 1MHZ 8SOIC	2147483647
NV25040DTHFT3G Sanyo Semiconductor/ON Semiconductor	IC EEPROM 4KBIT SPI 10MHZ 8TSSOP	0
LE25S81AMDTWG Sanyo Semiconductor/ON Semiconductor	IC FLASH 8MBIT SPI 70MHZ 8SOIC	2780

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)