Memory

Image	Part Number	Description / PDF	Quantity	Rfq
	NM24C16M Sanyo Semiconductor/ON Semiconductor	IC EEPROM 16KBIT I2C 14SOIC	0
	NM93CS06M Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256B SPI 1MHZ 14SOIC	0
	N01L83W2AN5I Sanyo Semiconductor/ON Semiconductor	IC SRAM 1MBIT PARALLEL 32STSOP I	0
	CAT24C16ZI-G Sanyo Semiconductor/ON Semiconductor	IC EEPROM 16KBIT I2C 8MSOP	0
	N04L63W1AB27IT Sanyo Semiconductor/ON Semiconductor	IC SRAM 4MBIT PARALLEL 48BGA	0
	NM27C010N150 Sanyo Semiconductor/ON Semiconductor	IC EPROM 1MBIT PARALLEL 32DIP	0
	CAT25M01YI-G Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1MBIT SPI 10MHZ 8TSSOP	0
	CAT24C04ZI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 4KBIT I2C 400KHZ 8MSOP	0
	NM24C02N Sanyo Semiconductor/ON Semiconductor	IC EEPROM 2KBIT I2C 100KHZ 8DIP	0
	CAT28C64BH13-12T Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64KBIT PARALLEL 28TSOP	0
	NM27C512V90 Sanyo Semiconductor/ON Semiconductor	IC EPROM 512KBIT PARALLEL 32PLCC	0
	CAT28C512G12 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 512KBIT PAR 32PLCC	0
	FM27C256QE150 Sanyo Semiconductor/ON Semiconductor	IC EPROM 256KBIT PARALLEL 28CDIP	0
	CAT28C64BH1390 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64KBIT PARALLEL 28TSOP	0
	CAT25160VI-GT3C Sanyo Semiconductor/ON Semiconductor	IC EEPROM 16KB SER SPI 8SOIC	0
	N02L6181AB27I Sanyo Semiconductor/ON Semiconductor	IC SRAM 2MBIT PARALLEL 48BGA	0
	NM93CS56M Sanyo Semiconductor/ON Semiconductor	IC EEPROM 2KBIT SPI 1MHZ 14SOIC	0
	CAT28F001G-12TT Sanyo Semiconductor/ON Semiconductor	IC FLASH 1MBIT PARALLEL 32PLCC	0
	CAT28C256LI12 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256KBIT PARALLEL 28DIP	0
	CAT24C01WE-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1KBIT I2C 400KHZ 8SOIC	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)