Memory

Image	Part Number	Description / PDF	Quantity	Rfq
	NMC27C64Q200 Sanyo Semiconductor/ON Semiconductor	IC EPROM 64KBIT PARALLEL 28CDIP	0
	NM27C128Q120 Sanyo Semiconductor/ON Semiconductor	IC EPROM 128KBIT PARALLEL 28CDIP	0
	MM74C910N Sanyo Semiconductor/ON Semiconductor	IC RAM 256B PARALLEL 18DIP	0
	CAT28C64BG12 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64KBIT PARALLEL 32PLCC	0
	CAT28F020LI90 Sanyo Semiconductor/ON Semiconductor	IC FLASH 2MBIT PARALLEL 32DIP	0
	FM93C46EM8 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1KBIT SPI 1MHZ 8SO	0
	CAT24C64LI-G Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64KBIT I2C 1MHZ 8DIP	0
	NM93CS06LEM8 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256B SPI 250KHZ 8SO	0
	CAT28C256GI12 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256KBIT PAR 32PLCC	0
	N02L63W2AT25I Sanyo Semiconductor/ON Semiconductor	IC SRAM 2MBIT PARALLEL 44TSOP II	0
	FM93C46LM8 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1KBIT SPI 250KHZ 8SO	0
	CAT28F010GI90 Sanyo Semiconductor/ON Semiconductor	IC FLASH 1MBIT PARALLEL 32PLCC	0
	CAT25C256LI-G Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256KBIT SPI 5MHZ 8DIP	0
	CAT25160VI-GC Sanyo Semiconductor/ON Semiconductor	IC EEPROM 16KB SER SPI 8SOIC	0
	CAT28F010G90 Sanyo Semiconductor/ON Semiconductor	IC FLASH 1MBIT PARALLEL 32PLCC	0
	CAT28F010L12 Sanyo Semiconductor/ON Semiconductor	IC FLASH 1MBIT PARALLEL 32DIP	0
	NM27C256QE200 Sanyo Semiconductor/ON Semiconductor	IC EPROM 256KBIT PARALLEL 28CDIP	0
	FM27C256Q150 Sanyo Semiconductor/ON Semiconductor	IC EPROM 256KBIT PARALLEL 28CDIP	0
	CAT28LV64WI-25T Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64KBIT PARALLEL 28SOIC	0
	CAT28F001L-12B Sanyo Semiconductor/ON Semiconductor	IC FLASH 1MBIT PARALLEL 32DIP	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)