Memory

Part Number	Description / PDF	Quantity
MT46V32M16CY-5B IT:J Micron Technology	IC DRAM 512MBIT PARALLEL 60FBGA	0
MTFC16GLWDM-4M AIT Z TR Micron Technology	IC FLASH 128GBIT MMC 153TFBGA	375
MT25QL01GBBB8ESF-0SIT TR Micron Technology	IC FLASH 1GBIT SPI 133MHZ 16SO	0
MT29F1G01ABAFD12-AAT:F TR Micron Technology	IC FLASH 1GBIT SPI 24TBGA	850
MT47H128M4BT-37E:A TR Micron Technology	IC DRAM 512MBIT PARALLEL 92FBGA	749
MT46H64M16LFBF-5 IT:B TR Micron Technology	IC DRAM 1GBIT PARALLEL 60VFBGA	1000
MT46V128M4FN-5B:D TR Micron Technology	IC DRAM 512MBIT PARALLEL 60FBGA	981
MT58L64L18DT-7.5 Micron Technology	CACHE SRAM 64KX18 4.2NS PQFP100	449
MT48LC4M32B2B5-6A AAT:L TR Micron Technology	IC DRAM 128MBIT PARALLEL 90VFBGA	160
MT46V128M4TG-5B:D TR Micron Technology	IC DRAM 512MBIT PARALLEL 66TSOP	1126
MT25QL01GBBB8E12-0SIT TR Micron Technology	IC FLSH 1GBIT SPI 133MHZ 24TPBGA	0
MT58L64L32DT-7.5TR Micron Technology	CACHE SRAM, 64KX32, 4NS	1000
MT46H64M16LFBF-5 IT:B Micron Technology	IC DRAM 1GBIT PARALLEL 60VFBGA	8910
MT41K64M16TW-107 AIT:J TR Micron Technology	IC DRAM 1GBIT PARALLEL 96FBGA	2235
MT29F4G08ABAFAWP-IT:F TR Micron Technology	IC FLASH 4GBIT PARALLEL 48TSOP I	0
MT58L128L18DT-10 Micron Technology	CACHE SRAM, 128KX18, 5NS PQFP100	28735
MT29F16G08ABACAWP-ITZ:C TR Micron Technology	IC FLSH 16GBIT PARALLEL 48TSOP I	649
MT52L256M32D1PF-093 WT:B TR Micron Technology	IC DRAM 8GBIT 1067MHZ 178FBGA	305
MT41K1G8RKB-107:P Micron Technology	IC DRAM 8GBIT PARALLEL 78FBGA	0
MT58L64L32PT-10 Micron Technology	CACHE SRAM, 64KX32, 5NS PQFP100	204979

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)