Memory

Part Number	Description / PDF	Quantity
MT58L256L36PF-7.5 Micron Technology	CACHE SRAM, 256KX36, 4NS PBGA165	1335
MT58L128L18PT-7.5 Micron Technology	CACHE SRAM, 128KX18, 4NS PQFP100	2281
MT29F4G08ABADAH4-IT:D Micron Technology	IC FLASH 4GBIT PARALLEL 63VFBGA	1091
MT46H32M16LFBF-5 IT:C Micron Technology	IC DRAM 512MBIT PARALLEL 60VFBGA	7654
MT57W1MH18CF-4 Micron Technology	DDR SRAM, 1MX18, 0.45NS PBGA165	587
MT48H32M16LFB4-6 AT:C Micron Technology	IC DRAM 512MBIT PARALLEL 54VFBGA	0
MT29F64G08AECDBJ4-6IT:D Micron Technology	IC FLASH 64GBIT PARALLEL 132VBGA	0
MT46V64M8P-5B:J Micron Technology	IC DRAM 512MBIT PARALLEL 66TSOP	0
MT29F2G08ABAGAWP-IT:G TR Micron Technology	IC FLASH 2GBIT PARALLEL 48TSOP I	0
MT58L128V32P1T-7.5 Micron Technology	CACHE SRAM, 128KX32, 4NS PQFP100	30241
MT41K1G4DA-107:P Micron Technology	IC DRAM 4GBIT PARALLEL 78FBGA	1352
MT28EW01GABA1HPC-0AAT TR Micron Technology	IC FLASH 1GBIT PARALLEL 64LBGA	0
MT29F1G08ABAFAH4-ITE:F Micron Technology	IC FLASH 1GBIT PARALLEL 63VFBGA	0
MT53E384M32D2DS-053 AAT:E Micron Technology	IC DRAM 12GBIT 1.866GHZ 200WFBGA	1360
MT25QU128ABA8ESF-0SIT Micron Technology	IC FLASH 128MBIT SPI 133MHZ 16SO	0
MT41K64M16TW-107 IT:J TR Micron Technology	IC DRAM 1GBIT PARALLEL 96FBGA	0
MT25QU128ABA8E12-0AAT Micron Technology	IC FLASH 128MBIT SPI 24TPBGA	1122
MT52L256M32D1PF-107 WT:B TR Micron Technology	IC DRAM 8GBIT 933MHZ 178FBGA	0
MT48LC16M16A2P-6A:G TR Micron Technology	IC DRAM 256MBIT PAR 54TSOP II	6976
MT58L128L36P1T-7.5IT Micron Technology	CACHE SRAM, 128KX36, 4NS PQFP100	1555

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)