Memory

Part Number	Description / PDF	Quantity
MT55L256L32FT-12IT Micron Technology	SRAM 3.3V 8M-BIT 256KX32 9NS	1842
EDB4064B4PB-1DIT-F-R Micron Technology	IC DRAM 4GBIT PARALLEL 216WFBGA	1000
MT53D512M32D2DS-053 AUT:D Micron Technology	IC DRAM 16GBIT 1.866GHZ 200WFBGA	0
MT25QU256ABA8ESF-0SIT TR Micron Technology	IC FLASH 256MBIT SPI 133MHZ 16SO	0
MT28EW01GABA1HPC-0AAT Micron Technology	IC FLASH 1GBIT PARALLEL 64LBGA	0
MT48LC16M16A2B4-6A XIT:G TR Micron Technology	IC DRAM 256MBIT PARALLEL 54VFBGA	17
MT29F8G08ABACAWP-AIT:C Micron Technology	IC FLASH 8GBIT PARALLEL 48TSOP I	0
MT41K64M16TW-107:J TR Micron Technology	IC DRAM 1GBIT PARALLEL 96FBGA	646
MT58L256L36PS-7.5 Micron Technology	CACHE SRAM, 256KX36, 4NS PQFP100	69005
MT57W1MH18JF-6 Micron Technology	IC SRAM 18MBIT PARALLEL 165FBGA	8686
MT55L128V36P1T-10 Micron Technology	IC SRAM 4MBIT PARALLEL 100TQFP	6659
MT55L256L18F1T-12 Micron Technology	ZBT SRAM, 256KX18, 9NS PQFP100	89160
MT29F1G01ABAFDWB-IT:F TR Micron Technology	IC FLASH 1GBIT SPI 8UPDFN	0
MT58L128V36P1F-5 Micron Technology	CACHE SRAM, 128KX36, 2.8NS PBGA1	103
MT29F2T08EMHAFJ4-3T:A TR Micron Technology	IC FLASH 2TB PARALLEL 132VBGA	0
MT58L32L36FT-10 Micron Technology	CACHE SRAM, 32KX36, 10NS PQFP100	4719
MT44K32M18RB-107E:B TR Micron Technology	IC DRAM 576MBIT PARALLEL 168BGA	0
EDB8132B4PM-1DAT-F-D Micron Technology	IC DRAM 8GBIT PARALLEL 168FBGA	0
MT29F32G08ABAAAWP-Z:A Micron Technology	IC FLSH 32GBIT PARALLEL 48TSOP I	0
MT46H32M16LFBF-5 IT:C TR Micron Technology	IC DRAM 512MBIT PARALLEL 60VFBGA	1423

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)