Memory

Part Number	Description / PDF	Quantity
MT28EW128ABA1HPC-0SIT TR Micron Technology	IC FLASH 128MBIT PARALLEL 64LBGA	0
MT55L512Y32PT-10 Micron Technology	IC SRAM 18MBIT PARALLEL 100TQFP	2879
MT58L512Y36PF-6 Micron Technology	IC SRAM 18MBIT PARALLEL 165FBGA	121
MT41K512M8DA-107 XIT:P TR Micron Technology	IC DRAM 4GBIT PARALLEL 78FBGA	0
MT58V512V36FT-7.5 Micron Technology	CACHE SRAM, 512KX36, 7.5NS PQFP1	3349
MTFC16GAPALBH-AAT Micron Technology	IC FLASH 128GBIT MMC 153TFBGA	0
MT58L32L32PT-6TR Micron Technology	CACHE SRAM, 32KX32, 3.5NS	1000
MT40A256M16LY-062E AIT:F TR Micron Technology	IC DRAM 4GBIT PARALLEL 96FBGA	0
MT58L64L18PT-10 Micron Technology	CACHE SRAM, 64KX18, 5NS PQFP100	8437
MT53E128M32D2DS-053 AIT:A TR Micron Technology	IC DRAM 4GBIT 1.866GHZ 200WFBGA	0
MT29F64G08CBABBWP-12IT:B Micron Technology	IC FLASH 64GBIT PAR 48TSOP I	0
MT55V512V32PF-10 Micron Technology	ZBT SRAM, 512KX32, 5NS PBGA165	97
MT25QL128ABA1EW9-0SIT TR Micron Technology	IC FLASH 128MBIT SPI 8WPDFN	0
MT55V512V32PT-10 Micron Technology	IC SRAM 18MBIT PARALLEL 100TQFP	20
MT25QU01GBBB8E12-0AUT Micron Technology	IC FLSH 1GBIT SPI 133MHZ 24TPBGA	0
MT58L512L18PS-6 Micron Technology	IC SRAM 8MBIT PARALLEL 100TQFP	0
MT49H16M36SJ-25E:B TR Micron Technology	IC DRAM 576MBIT PARALLEL 144FBGA	0
MT25QL01GBBB8E12E01-2SIT Micron Technology	IC FLSH 1GBIT SPI 133MHZ 24TPBGA	0
MT53E128M32D2DS-046 AUT:A TR Micron Technology	IC DRAM 4GBIT 2.133GHZ 200WFBGA	0
MT58L512Y36PT-6 Micron Technology	CACHE SRAM, 512KX36, 3.5NS PQFP1	891

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)