Memory

Image Part Number Description / PDF Quantity Rfq
MT58L256L32FS-8.5IT

MT58L256L32FS-8.5IT

Micron Technology

CACHE SRAM, 256KX32, 8.5NS PQFP1

15

MT29F2G08ABAEAH4-AATX:E

MT29F2G08ABAEAH4-AATX:E

Micron Technology

IC FLASH 2GBIT PARALLEL 63VFBGA

0

MT44K16M36RB-107E:B TR

MT44K16M36RB-107E:B TR

Micron Technology

IC DRAM 576MBIT PARALLEL 168BGA

0

MT58V512V32FT-8.5

MT58V512V32FT-8.5

Micron Technology

CACHE SRAM, 512KX32, 8.5NS PQFP1

67

MT25QL128ABA8E12-1SIT TR

MT25QL128ABA8E12-1SIT TR

Micron Technology

IC FLASH 128MBIT SPI 24TPBGA

2121

MT53E128M32D2DS-046 AAT:A TR

MT53E128M32D2DS-046 AAT:A TR

Micron Technology

IC DRAM 4GBIT 2.133GHZ 200WFBGA

0

MT47H128M16RT-25E AIT:C

MT47H128M16RT-25E AIT:C

Micron Technology

IC DRAM 2GBIT PARALLEL 84FBGA

0

MT54V1MH18EF-7.5

MT54V1MH18EF-7.5

Micron Technology

QDR SRAM, 1MX18, 3NS PBGA165

0

MT47H128M16RT-25E AAT:C TR

MT47H128M16RT-25E AAT:C TR

Micron Technology

IC DRAM 2GBIT PARALLEL 84FBGA

855

MT29F4G08ABBDAH4:D TR

MT29F4G08ABBDAH4:D TR

Micron Technology

IC FLASH 4GBIT PARALLEL 63VFBGA

612

MT58L128L32F1F-10

MT58L128L32F1F-10

Micron Technology

IC SRAM 4MBIT PARALLEL 165FBGA

1117

MT28EW128ABA1HJS-0SIT

MT28EW128ABA1HJS-0SIT

Micron Technology

IC FLASH 128MBIT PARALLEL 56TSOP

0

MT29F1G08ABAFAH4-ITE:F TR

MT29F1G08ABAFAH4-ITE:F TR

Micron Technology

IC FLASH 1GBIT PARALLEL 63VFBGA

816

MT55L256V32PT-6

MT55L256V32PT-6

Micron Technology

ZBT SRAM, 256KX32, 3.5NS PQFP100

135

MT29F2G08ABBEAH4-ITX:E TR

MT29F2G08ABBEAH4-ITX:E TR

Micron Technology

IC FLASH 2GBIT PARALLEL 63VFBGA

816

MT29F32G08CBADBWP-12IT:D

MT29F32G08CBADBWP-12IT:D

Micron Technology

IC FLASH 32GBIT PAR 48TSOP I

0

MT41K256M8DA-125 IT:K TR

MT41K256M8DA-125 IT:K TR

Micron Technology

IC DRAM 2GBIT PARALLEL 78FBGA

0

MT58L256L18F1T-10

MT58L256L18F1T-10

Micron Technology

CACHE SRAM 256KX18 10NS PQFP100

0

MT29F2T08EMHAFJ4-3T:A

MT29F2T08EMHAFJ4-3T:A

Micron Technology

IC FLASH 2TB PARALLEL 132VBGA

0

MTFC8GLGDM-AIT Z

MTFC8GLGDM-AIT Z

Micron Technology

IC FLASH 64GBIT MMC 153TFBGA

0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
DRAM (Dynamic RAM)High-density, low-cost, requires periodic refreshPCs, Servers, Graphics Cards
NAND FlashNon-volatile, high endurance, block-level accessSSDs, USB Drives, Mobile Storage
SRAM (Static RAM)High-speed, low density, no refresh requiredCache Memory, Networking Equipment
NOR FlashRandom access, execute-in-place capabilityEmbedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)Non-volatile, unlimited endurance, low powerIoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

  • Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
  • Address Decoder: Selects specific memory locations
  • I/O Circuits: Data input/output interfaces
  • Control Logic: Manages read/write operations and timing
  • Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

ParameterDescriptionImportance
Storage CapacityData volume (Gb/GiB)Determines system memory limits
Access Timens/predictable latencyImpacts processing speed
Power ConsumptionmW/MHzAffects battery life and thermal design
EnduranceP/E cycles (Flash)Dictates product lifespan
Data RetentionYears (non-volatile)Critical for long-term storage

5. Application Areas

  • Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
  • Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
  • Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
  • Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

ManufacturerRepresentative Products
Samsung ElectronicsV-NAND (9x-layer), LPDDR5X
SK hynixHBM3 (8GB/s bandwidth), GDDR6
Microchip TechnologySerial NOR Flash (SST26)
Kioxia CorporationBiCS FLASH (3D NAND)
Infineon TechnologiesMRAM (40nm process)

7. Selection Recommendations

Key considerations:

  • Match memory type to application requirements (e.g., NOR Flash for code storage)
  • Evaluate bandwidth vs. latency tradeoffs
  • Analyze temperature and vibration specifications
  • Assess long-term supply stability
  • Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

  • 3D NAND scaling beyond 200 layers
  • Emerging memories (ReRAM, PCM) for AI acceleration
  • Package-on-Package (PoP) integration
  • AI-optimized memory architectures (Processing-in-Memory)
  • Green manufacturing processes (EUV lithography)
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