Memory

Part Number	Description / PDF	Quantity
MT44K16M36RB-093F:B TR Micron Technology	IC DRAM 576MBIT PARALLEL 168BGA	0
MT58L256L18F1T-8.5ITTR Micron Technology	CACHE SRAM, 256KX18, 8.5NS	15000
MT53B128M32D1DS-062 AIT:A Micron Technology	IC DRAM 4GBIT 1600MHZ 200WFBGA	110
MT25QL128ABA1ESE-MSIT TR Micron Technology	IC FLSH 128MBIT SPI 133MHZ 8SOP2	0
MT29F1G08ABAEAH4-AATX:E Micron Technology	IC FLASH 1GBIT PARALLEL 63VFBGA	0
MT25QL256ABA1EW9-0SIT TR Micron Technology	IC FLASH 256MBIT SPI 8WPDFN	0
MTFC8GACAENS-AAT Micron Technology	IC FLASH 64GBIT MMC 153TFBGA	0
MT58L512L18FT-8.5 Micron Technology	CACHE SRAM, 512KX18, 8.5NS PQFP1	5479
MT46V16M16CY-5B:M TR Micron Technology	IC DRAM 256MBIT PARALLEL 60FBGA	88
PC28F512P30BFA Micron Technology	IC FLASH 512MBIT PAR 64EASYBGA PC28F512P30BFA	1763
MT46H16M32LFB5-5 IT:C TR Micron Technology	IC DRAM 512MBIT PARALLEL 90VFBGA	0
MT58L1MY18DF-7.5 Micron Technology	CACHE SRAM, 1MX18, 4NS PBGA165	211
MT55L128L36F1T-11 Micron Technology	ZBT SRAM, 128KX36, 8.5NS PQFP100	4272
MT28EW01GABA1LJS-0SIT TR Micron Technology	IC FLASH 1GBIT PARALLEL 56TSOP	0
MT29F512G08EBHAFJ4-3ITFES:A TR Micron Technology	IC FLASH 512GBIT PAR 132VBGA	0
MT58L256L18F1T-10ITTR Micron Technology	SRAM SYNC DUAL 4M-BIT 256KX18	1000
MT28EW128ABA1LPC-0SIT TR Micron Technology	IC FLASH 128MBIT PARALLEL 64LBGA	0
MT53E128M32D2DS-046 AAT:A Micron Technology	IC DRAM 4GBIT 2.133GHZ 200WFBGA	0
MT53E768M32D4DT-053 AIT:E TR Micron Technology	IC DRAM 24GBIT 1.866GHZ 200VFBGA	0
MT58L256V32PS-7.5 Micron Technology	CACHE SRAM, 256KX32, 4NS PQFP100	2097

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)