Memory

Part Number	Description / PDF	Quantity
BR95160-RMN6TP ROHM Semiconductor	IC EEPROM 16KBIT SPI 2MHZ 8SO	0
BR93G46NUX-3ATTR ROHM Semiconductor	IC EEPROM 1KBIT SPI VSON008X2030	7954
BR24G01FVT-3AGE2 ROHM Semiconductor	IC EEPROM 1KBIT I2C 1MHZ 8TSSOPB	651
BR25L640F-WE2 ROHM Semiconductor	IC EEPROM 64KBIT SPI 5MHZ 8SOP	1850
BR93H46RF-2LBH2 ROHM Semiconductor	IC EEPROM 1KBIT SPI 2MHZ 8SOP	250
MSM51V18160F-60T3-K7 ROHM Semiconductor	IC DRAM 16M PARALLEL 50TSOP	1
BR25L160FV-WE2 ROHM Semiconductor	IC EEPROM 16KBIT SPI 5MHZ 8SSOPB	0
BR24G02-3 ROHM Semiconductor	IC EEPROM 2KBIT I2C 400KHZ 8DIP	1457
BR34E02FVT-3E2 ROHM Semiconductor	IC EEPROM 2KBIT I2C 8TSSOPB	767
BR24C16-WMN6TP ROHM Semiconductor	IC EEPROM 16KBIT I2C 400KHZ 8SO	0
BR24G08FV-3GTE2 ROHM Semiconductor	IC EEPROM 8KBIT I2C 8SSOPB	2451
BR25G640FVT-3GE2 ROHM Semiconductor	IC EEPROM 64KBIT SPI 8TSSOPB	1779
BR24G08FVJ-3AGTE2 ROHM Semiconductor	IC EEPROM 8KBIT I2C 1MHZ 8TSSOP	63
BR24G32F-3AGTE2 ROHM Semiconductor	IC EEPROM 32K I2C 1MHZ 8SOP	2457
BR24C16-WDS6TP ROHM Semiconductor	IC EEPROM 16KBIT I2C 8TSSOP	0
BR24L08FJ-WE2 ROHM Semiconductor	IC EEPROM 8KBIT I2C 400KHZ 8SOPJ	1025
BR24C21FV-E2 ROHM Semiconductor	IC EEPROM 1KBIT I2C 8SSOPB	358
BR25L010FVM-WTR ROHM Semiconductor	IC EEPROM 1KBIT SPI 5MHZ 8MSOP	0
BR25H010FVT-2CE2 ROHM Semiconductor	IC EEPROM 1KBIT SPI 8TSSOPB	2331
BR93G56FJ-3GTE2 ROHM Semiconductor	IC EEPROM 2KBIT SPI 3MHZ 8SOPJ	1700

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)