Memory

Part Number	Description / PDF	Quantity
BR25G512FJ-3GE2 ROHM Semiconductor	IC EEPROM 512KBIT SPI 8SOPJ	1368
BR25G640FVM-3GTR ROHM Semiconductor	IC EEPROM 64KBIT SPI 20MHZ 8MSOP	66
BR95040-WMN6TP ROHM Semiconductor	IC EEPROM 4KBIT SPI 5MHZ 8SO	0
BR24C01-RDW6TP ROHM Semiconductor	IC EEPROM 1KBIT I2C 8TSSOP	0
BR24G32FVT-3GE2 ROHM Semiconductor	IC EEPROM 32KBIT I2C 8TSSOP	3000
BR93A76RFVM-WMTR ROHM Semiconductor	IC EEPROM 8KBIT SPI 2MHZ 8MSOP	2985
BR24C08-DW6TP ROHM Semiconductor	IC EEPROM 8KBIT I2C 8TSSOP	0
BR93G76FVJ-3AGTE2 ROHM Semiconductor	IC EEPROM 8K SPI 3MHZ 8TSSOP	2470
BR24S08NUX-WTR ROHM Semiconductor	IC EEPROM 8KBIT I2C VSON008X2030	0
BR93G66FVT-3GE2 ROHM Semiconductor	IC EEPROM 4KBIT SPI 3MHZ 8TSSOPB	2950
BR24T64-WZ ROHM Semiconductor	IC EEPROM 64K I2C 400KHZ DIP8K	1296
BR24C16-DW6TP ROHM Semiconductor	IC EEPROM 16KBIT I2C 8TSSOP	0
BR24T16FVJ-WE2 ROHM Semiconductor	IC EEPROM 16K I2C 400KHZ 8TSSOP	1733
BR25H160FVT-2CE2 ROHM Semiconductor	IC EEPROM 16KBIT SPI 8TSSOPB	2990
BR24A08F-WLBH2 ROHM Semiconductor	IC EEPROM 8KBIT I2C 400KHZ 8SOP	204
BR24T32FV-WE2 ROHM Semiconductor	IC EEPROM 32KBIT I2C 8SSOPB	0
BR24C04-DS6TP ROHM Semiconductor	IC EEPROM 4KBIT I2C 8TSSOP	0
BR24S16FVT-WE2 ROHM Semiconductor	IC EEPROM 16K I2C 400KHZ 8TSSOP	131
BR93G76F-3GTE2 ROHM Semiconductor	IC EEPROM 8KBIT SPI 3MHZ 8SOP	2495
BR93G86FVJ-3GTE2 ROHM Semiconductor	IC EEPROM 16K SPI 3MHZ 8TSSOP	2500

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)