Memory

Part Number	Description / PDF	Quantity
BR93G66NUX-3TTR ROHM Semiconductor	IC EEPROM 4KBIT SPI VSON008X2030	100
BRCC064GWZ-3E2 ROHM Semiconductor	IC EEPROM 64KBIT I2C UCSP30L1	2592
BR24C08-RDW6TP ROHM Semiconductor	IC EEPROM 8KBIT I2C 8TSSOP	0
BR25H128F-2LBH2 ROHM Semiconductor	IC EEPROM 128KBIT SPI 10MHZ 8SOP	242
BR24C16-RDS6TP ROHM Semiconductor	IC EEPROM 16KBIT I2C 8TSSOP	0
BR93G66FVJ-3BGTE2 ROHM Semiconductor	IC EEPROM 4KBIT SPI 3MHZ 8TSSOP	2475
BR93H76RF-2CE2 ROHM Semiconductor	IC EEPROM 8KBIT SPI 2MHZ 8SOP	2500
BRCD016GWZ-3E2 ROHM Semiconductor	IC EEPROM 16K I2C UCSP35L1	3000
BR24G01F-3AGTE2 ROHM Semiconductor	IC EEPROM 1K I2C 1MHZ 8SOP	2430
BR24L02FJ-WE2 ROHM Semiconductor	IC EEPROM 2KBIT I2C 400KHZ 8SOPJ	1866
BR24C16A-10TU-1.8 ROHM Semiconductor	IC EEPROM 16KBIT I2C 8TSSOP	0
BR24G32F-3GTE2 ROHM Semiconductor	IC EEPROM 32KBIT I2C 400KHZ 8SOP	319
BR24C01-MN6TP ROHM Semiconductor	IC EEPROM 1KBIT I2C 400KHZ 8SO	0
BR24S64FVT-WE2 ROHM Semiconductor	IC EEPROM 64K I2C 400KHZ 8TSSOP	5344
BR25L320FJ-WE2 ROHM Semiconductor	IC EEPROM 32KBIT SPI 5MHZ 8SOPJ	4342
BR24G16FVM-3GTTR ROHM Semiconductor	IC EEPROM 16KBIT I2C 8MSOP	318
BR25S128GUZ-WE2 ROHM Semiconductor	IC EEPROM 128K SPI VCSP35L2	5026
BR24T02FJ-WE2 ROHM Semiconductor	IC EEPROM 2KBIT I2C 400KHZ 8SOPJ	6020
BR25H020F-2LBH2 ROHM Semiconductor	IC EEPROM 2KBIT SPI 10MHZ 8SOP	207
BR93G86NUX-3BTTR ROHM Semiconductor	IC EEPROM 16K SPI VSON008X2030	4000

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)