Memory

Part Number	Description / PDF	Quantity
BR24T16FV-WE2 ROHM Semiconductor	IC EEPROM 16K I2C 400KHZ 8SSOPB	2205
BR24L32FVT-WE2 ROHM Semiconductor	IC EEPROM 32KBIT I2C 8TSSOP	2593
BR93G76FVJ-3GTE2 ROHM Semiconductor	IC EEPROM 8K SPI 3MHZ 8TSSOP	2500
BR24T128FJ-WE2 ROHM Semiconductor	IC EEPROM 128KBIT I2C 8SOPJ	2000
BR24G64FJ-3AGTE2 ROHM Semiconductor	IC EEPROM 64KBIT I2C 1MHZ 8SOPJ	2500
MR44V100AMAZAATL ROHM Semiconductor	IC FRAM 1MBIT I2C 3.4MHZ 8SOP	2129
BR24L02NUX-WTR ROHM Semiconductor	IC EEPROM 2KBIT I2C VSON008X2030	4000
BR93A66RFVT-WME2 ROHM Semiconductor	IC EEPROM 4KBIT SPI 2MHZ 8TSSOPB	3000
BR25S640FV-WE2 ROHM Semiconductor	IC EEPROM 64KBIT SPI 8SSOPB	9399
BR24T02FVM-WTR ROHM Semiconductor	IC EEPROM 2KBIT I2C 400KHZ 8MSOP	531
BR93A46F-WME2 ROHM Semiconductor	IC EEPROM 1KBIT SPI 2MHZ 8SOP	2500
BR93G86FVJ-3BGTE2 ROHM Semiconductor	IC EEPROM 16K SPI 3MHZ 8TSSOP	2496
BR93G76F-3BGTE2 ROHM Semiconductor	IC EEPROM 8KBIT SPI 3MHZ 8SOP	2420
BR93G76FVT-3AGE2 ROHM Semiconductor	IC EEPROM 8KBIT SPI 3MHZ 8TSSOPB	2915
BR93G66F-3BGTE2 ROHM Semiconductor	IC EEPROM 4KBIT SPI 3MHZ 8SOP	2490
BR24G512FJ-3AGTE2 ROHM Semiconductor	IC EEPROM 512KBIT I2C 1MHZ 8SOPJ	2385
BR93C46-10TU-2.7 ROHM Semiconductor	IC EEPROM 1KBIT SPI 2MHZ 8TSSOP	0
BR93H86RFVT-2CE2 ROHM Semiconductor	IC EEPROM 16KBIT SPI 8TSSOPB	2175
BR93G66F-3AGTE2 ROHM Semiconductor	IC EEPROM 4KBIT SPI 3MHZ 8SOP	1879
BR24S08FVM-WTR ROHM Semiconductor	IC EEPROM 8K I2C 400KHZ 8MSOP	2400

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)