Memory

Image	Part Number	Description / PDF	Quantity	Rfq
	THGBMHG6C1LBAWL Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 64GBIT EMMC 153WFBGA	0
	THGBMHT0C8LBAIG Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 128GBIT EMMC 153WFBGA	0
	THGBMHG8C2LBAIL Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 256GBIT EMMC 153WFBGA	0
	THGBMHG9C4LBAIR Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 512GBIT EMMC 153WFBGA	0
	THGBMHG7C1LBAIL Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 128GBIT EMMC 153WFBGA	0
	TC58NVG1S3ETA00 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 2GBIT PARALLEL 48TSOP I	0
	THGBMGG9U4LBAIR Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 512G MMC 153FBGA	0
	TC58CYG0S3HRAIJ Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 1GBIT SPI 133MHZ 8WSON	0
	TC58CYG2S0HRAIJ Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 4GBIT SPI 133MHZ 8WSON	0
	THGBMHG8C4LBAIR Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH MEM MMC 169VFBGA	0
	THGBMHG6C1LBAW6 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH MEM MMC 153FBGA	0
	THGBMHG8C4LBAW7 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH MEM MMC 169VFBGA	0
	THGBMHG7C2LBAW7 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH MEM MMC 153FBGA	0
	THGBMFG6C1LBAIL Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 64G EMMC 153-FBGA	0
	TC58CVG0S3HRAIJ Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 1GBIT SPI 133MHZ 8WSON	0
	THGBMFG8C2LBAIL Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 256G MMC 153FBGA	0
	THGBMHG7C2LBAIL Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH MEM MMC 153FBGA	0
	TC58CVG2S0HRAIJ Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 4GBIT SPI 133MHZ 8WSON	0
	THGBMHG9C8LBAW8 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH MEM MMC 153FBGA	0
	THGBMFG7C1LBAIL Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 128G MMC 153FBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)