Memory

Part Number	Description / PDF	Quantity
THGBMHG9C8LBAU8 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 64GBIT EMMC 153WFBGA	0
TH58NVG4S0FTA20 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLSH 16GBIT PARALLEL 48TSOP I	0
THGBMHG8C4LBAU7 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 32GBIT EMMC 153WFBGA	0
TC58CVG0S3HRAIG Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 1GBIT SPI 104MHZ 8WSON	0
TC58CYG0S3HQAIE Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 1GBIT SPI 104MHZ 16SOP	0
TC58NVG1S3ETAI0 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 2GBIT PARALLEL 48TSOP I	0
THGBMHG6C1LBAU6 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 8GBIT EMMC 153WFBGA	0
THGBMHG6C1LBAIL Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 64GBIT EMMC 153WFBGA	0
THGBMNG5D1LBAIL Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 32GBIT EMMC 153WFBGA	0
THGBMHG7C2LBAWR Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 128GBIT EMMC 153WFBGA	0
TC58CVG2S0HQAIE Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 4GBIT SPI 104MHZ 16SOP	0
TC58CYG2S0HRAIG Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 4GBIT SPI 104MHZ 8WSON	0
TH58BVG3S0HTAI0 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 8GBIT 48TSOP I	96
TC58CVG1S3HRAIG Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 2GBIT SPI 104MHZ 8WSON	0
TC58NVG2S0FTA00 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 4GBIT PARALLEL 48TSOP I	0
THGBMHG8C4LBAWR Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 256GBIT EMMC 153WFBGA	0
THGBMHG9C8LBAWG Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 512GBIT EMMC 153WFBGA	0
TC58CVG0S3HQAIE Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 1GBIT SPI 104MHZ 16SOP	0
TC58CVG2S0HRAIG Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 4GBIT SPI 104MHZ 8WSON	0
THGBMHG7C2LBAU7 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 16GBIT EMMC 153WFBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)