Memory

Part Number	Description / PDF	Quantity
TH58BVG2S3HBAI4 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 4GBIT 63TFBGA	206
TC58NVG0S3HBAI6 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 1GBIT PARALLEL 67VFBGA	338
TC58NVG0S3HBAI4 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 1GBIT PARALLEL 63TFBGA	1
TH58BYG2S3HBAI6 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 4GBIT PARALLEL 67VFBGA	338
TC58NVG1S3HBAI4 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 2GBIT PARALLEL 63TFBGA	0
TH58BVG2S3HTA00 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 4GBIT PARALLEL 48TSOP I	261
TH58BVG2S3HTAI0 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 4GBIT PARALLEL 48TSOP I	96
TC58NYG1S3HBAI4 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 2GBIT 63TFBGA	0
TH58NYG2S3HBAI6 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 4GBIT PARALLEL 63BGA	0
THGBMJG6C1LBAU7 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 8GBIT EMMC 153FBGA	456
TC58NVG1S3HTAI0 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 2GBIT PARALLEL 48TSOP I	45
TC58NVG2S0HBAI4 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 4GBIT PARALLEL 63TFBGA	128
TC58BVG1S3HBAI6 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 2GBIT PARALLEL 67VFBGA	0
THGBMJG8C2LBAIL Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 32GBIT EMMC 153FBGA	0
TC58BVG2S0HTA00 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 4GBIT PARALLEL 48TSOP I	74
THGBMJG6C1LBAIL Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 8GBIT EMMC 153FBGA	54
TC58NVG2S0HTAI0 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 4GBIT PARALLEL 48TSOP I	38
TC58CYG0S3HRAIG Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 2GBIT SPI 104MHZ 8WSON	0
TC58BVG1S3HTAI0 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 2GBIT PARALLEL 48TSOP I	57
TH58NVG4S0HTA20 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLSH 16GBIT PARALLEL 48TSOP I	89

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)