Memory

Image Part Number Description / PDF Quantity Rfq
X28C513JZ-12

X28C513JZ-12

Intersil (Renesas Electronics America)

EEPROM, 64KX8, 5V, PARALLEL

0

X28C512J-12

X28C512J-12

Intersil (Renesas Electronics America)

IC EEPROM 512KBIT PAR 32PLCC

117

5962-9086902MYA

5962-9086902MYA

Intersil (Renesas Electronics America)

EEPROM, 64KX8, 250NS, PARALLEL

35

HM1-6551/883

HM1-6551/883

Intersil (Renesas Electronics America)

STANDARD SRAM, 256X4, 300NS

1666

X28HC64S-15

X28HC64S-15

Intersil (Renesas Electronics America)

EEPROM, 8KX8, 150NS, PARALLEL

1645

X28HC256J-15C7960

X28HC256J-15C7960

Intersil (Renesas Electronics America)

EEPROM, 32KX8, 5V, PARALLEL

314

X28C513EMB-25

X28C513EMB-25

Intersil (Renesas Electronics America)

EEPROM, 64KX8, 5V, PARALLEL

149

X28C513EMB-15

X28C513EMB-15

Intersil (Renesas Electronics America)

EEPROM, 64KX8, 5V, PARALLEL

252

X28HC256FI-90

X28HC256FI-90

Intersil (Renesas Electronics America)

EEPROM, 32KX8, 5V, PARALLEL

419

CDP68HC68T1M96S2357

CDP68HC68T1M96S2357

Intersil (Renesas Electronics America)

SERIAL REAL-TIME CLOCK WITH RAM

14000

X28HC256FMB-15

X28HC256FMB-15

Intersil (Renesas Electronics America)

EEPROM, 32KX8, 5V, PARALLEL

111

CDP68HC68T1M296S2357

CDP68HC68T1M296S2357

Intersil (Renesas Electronics America)

SERIAL REAL-TIME CLOCK WITH RAM

15994

5962-9086903MXAC7060

5962-9086903MXAC7060

Intersil (Renesas Electronics America)

EEPROM, 64KX8, 200NS, PARALLEL

33

5962-3826701MXAC7200

5962-3826701MXAC7200

Intersil (Renesas Electronics America)

READ ONLY MEMORY (EEPROM), MONOL

7

X24645S8

X24645S8

Intersil (Renesas Electronics America)

EEPROM, 8KX8, SERIAL, CMOS

0

CA22M3494MQAS2554

CA22M3494MQAS2554

Intersil (Renesas Electronics America)

SPECIAL

0

X28HC256JIZ-90

X28HC256JIZ-90

Intersil (Renesas Electronics America)

IC EEPROM 256KBIT PAR 32PLCC

0

X24C44SI

X24C44SI

Intersil (Renesas Electronics America)

IC NVSRAM 256B SPI 1MHZ 8SOIC

0

X28HC256JIZ-12T1

X28HC256JIZ-12T1

Intersil (Renesas Electronics America)

IC EEPROM 256KBIT PAR 32PLCC

0

X28HC256J-90

X28HC256J-90

Intersil (Renesas Electronics America)

IC EEPROM 256KBIT PAR 32PLCC

0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
DRAM (Dynamic RAM)High-density, low-cost, requires periodic refreshPCs, Servers, Graphics Cards
NAND FlashNon-volatile, high endurance, block-level accessSSDs, USB Drives, Mobile Storage
SRAM (Static RAM)High-speed, low density, no refresh requiredCache Memory, Networking Equipment
NOR FlashRandom access, execute-in-place capabilityEmbedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)Non-volatile, unlimited endurance, low powerIoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

  • Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
  • Address Decoder: Selects specific memory locations
  • I/O Circuits: Data input/output interfaces
  • Control Logic: Manages read/write operations and timing
  • Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

ParameterDescriptionImportance
Storage CapacityData volume (Gb/GiB)Determines system memory limits
Access Timens/predictable latencyImpacts processing speed
Power ConsumptionmW/MHzAffects battery life and thermal design
EnduranceP/E cycles (Flash)Dictates product lifespan
Data RetentionYears (non-volatile)Critical for long-term storage

5. Application Areas

  • Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
  • Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
  • Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
  • Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

ManufacturerRepresentative Products
Samsung ElectronicsV-NAND (9x-layer), LPDDR5X
SK hynixHBM3 (8GB/s bandwidth), GDDR6
Microchip TechnologySerial NOR Flash (SST26)
Kioxia CorporationBiCS FLASH (3D NAND)
Infineon TechnologiesMRAM (40nm process)

7. Selection Recommendations

Key considerations:

  • Match memory type to application requirements (e.g., NOR Flash for code storage)
  • Evaluate bandwidth vs. latency tradeoffs
  • Analyze temperature and vibration specifications
  • Assess long-term supply stability
  • Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

  • 3D NAND scaling beyond 200 layers
  • Emerging memories (ReRAM, PCM) for AI acceleration
  • Package-on-Package (PoP) integration
  • AI-optimized memory architectures (Processing-in-Memory)
  • Green manufacturing processes (EUV lithography)
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