Memory

Part Number	Description / PDF	Quantity
29205BXA Intersil (Renesas Electronics America)	STANDARD SRAM, 8KX8, 150NS, CMOS	39
24501BVA Intersil (Renesas Electronics America)	STANDARD SRAM, 4KX1, 120NS	141
29103BRA Intersil (Renesas Electronics America)	STANDARD SRAM, 16KX1	653
X28HC64JZ-15 Intersil (Renesas Electronics America)	EEPROM, 8KX8, 150NS, PARALLEL	1141
X28HC64P-90 Intersil (Renesas Electronics America)	IC EEPROM 64KBIT PARALLEL 28DIP	0
X28HC64P-70 Intersil (Renesas Electronics America)	IC EEPROM 64KBIT PARALLEL 28DIP	203
8403606JA Intersil (Renesas Electronics America)	STANDARD SRAM, 2KX8, 70NS CDIP24	186
X28C010DI-12 Intersil (Renesas Electronics America)	IC EEPROM 1MBIT PARALLEL 32CDIP	106
X28HC64J-90 Intersil (Renesas Electronics America)	IC EEPROM 64KBIT PARALLEL 32PLCC	371
X28C010DMB-12 Intersil (Renesas Electronics America)	EEPROM, 128KX8, PARALLEL	0
X28HC64PI-90 Intersil (Renesas Electronics America)	IC EEPROM 64KBIT PARALLEL 28DIP	292
X28C010RMB-25 Intersil (Renesas Electronics America)	EEPROM, 128KX8, PARALLEL	10
X28HC256PI-12 Intersil (Renesas Electronics America)	IC EEPROM 256KBIT PARALLEL 28DIP	0
X28HC256J-90C7168 Intersil (Renesas Electronics America)	EEPROM, 32KX8, 5V, PARALLEL	986
X28C512JZ-12 Intersil (Renesas Electronics America)	EEPROM, 64KX8, 5V, PARALLEL	341
X28C513J-15 Intersil (Renesas Electronics America)	IC EEPROM 512KBIT PAR 32PLCC	59
8413203YA Intersil (Renesas Electronics America)	SRAM, 16KX1, 70NS, CMOS, CQCC20	252
X28C010FM-12 Intersil (Renesas Electronics America)	EEPROM, 128KX8, PARALLEL	129
X28C010D-15 Intersil (Renesas Electronics America)	IC EEPROM 1MBIT PARALLEL 32CDIP	10
X28HC64SI-90 Intersil (Renesas Electronics America)	EEPROM, 8KX8, 90NS, PARALLEL	1186

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)