Memory

Part Number	Description / PDF	Quantity
RC28F640P30T85A Intel	IC FLASH 64MBIT PAR 64EASYBGA	1937
TE28F008BVT90 Intel	8M-BIT FLASH MEM, PARALLEL	29835
GE28F320B3BC90 Intel	IC FLASH 32MBIT PARALLEL 48VFBGA	19380
MD27512-35/B Intel	DUAL MARKED (5962-8513502YA)	6189
D2716 Intel	UVPROM, 2KX8, 450NS, MOS	12629
DA28F320J5A120 Intel	IC FLASH 32MBIT CFI 56SSOP	127888
N80C54 Intel	8-BIT, OTPROM, 6MHZ PQCC44	1229
RC28F640P30B85B Intel	FLASH, 4MX16, 85NS, PBGA64	7820
RC28F320C3TD90 Intel	FLASH, 2MX16, 90NS, PBGA64	4504
5962-9323501MXA Intel	EEPROM, 256KX8, 200NS, PARALLEL	135
TE28F160B3BA110S Intel	16M-BIT FLASH MEM, PARALLEL	13179
D2114A4 Intel	STANDARD SRAM, 1KX4	284
N27960K1-20 Intel	OTP ROM, 128KX8, 20NS PQCC44	2184
MD27512-30/B Intel	UVPROM, 64KX8, 350NS	404
MD51C68-70/B Intel	STANDARD SRAM, 4KX4, 70NS	0
06K4626 Intel	8MB SRAM CMOS6X CMOS6X1 CHINOOK	0
5962-9089901MUA Intel	FLASH, 128KX8, 250NS, CDFP32	1619
MD51C68-55/B Intel	STANDARD SRAM, 4KX4, 55NS	2363
MD27C010-30 Intel	128K X 8 UV EPROM	3332
5962-9089902MUA Intel	FLASH, 128KX8, 200NS, CDFP32	661

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)