Memory

Part Number	Description / PDF	Quantity
TE28F400CEB120 Intel	FLASH, 256KX16, 120NS, PDSO48	7160
LD2114AL4 Intel	STANDARD SRAM, 1KX4	44
AN28F010109 Intel	FLASH, 128KX8, 150NS	750
5962-9089904MYA Intel	FLASH, 128KX8, 120NS, CQCC32	4191
TE28F008B3T110 Intel	FLASH, 1MX8, 110NS, PDSO40	5563
P2114A5 Intel	STANDARD SRAM, 1KX4	6230
TE28F800B3B110 Intel	FLASH, 512KX16, 110NS, PDSO48	35483
MD27C25635 Intel	UVPROM, 32KX8, 350NS	23
N82802AC8 Intel	FIRMWARE HUB (FWH)	20250
JS28F128P30B85A Intel	IC FLASH 128MBIT PARALLEL 56TSOP	788
PC28F160C3BD70A Intel	IC FLASH 16MBIT PAR 64EASYBGA	2428
TE28F800B3TA120 Intel	ADVANCED BOOT BLOCK FLASH MEMORY	31102
MT28F010-20/B Intel	MEMORY IC	516
MD2148H Intel	STANDARD SRAM, 1KX4	209
MD2148H3 Intel	STANDARD SRAM, 1KX4	11789
5962-9089903MYA Intel	FLASH, 128KX8, 150NS, CQCC32	27
5962-9089901MYA Intel	FLASH, 128KX8, 250NS, CQCC32	1519
JS28F640P33T85A Intel	IC FLASH 64MBIT PARALLEL 56TSOP	140219
TE28F400CVT80 Intel	FLASH, 256KX16, 110NS, PDSO48	3797
JS28F640P30T85A Intel	IC FLASH 64MBIT PARALLEL 56TSOP	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)