Memory

Part Number	Description / PDF	Quantity
GS8162Z36BB-150I Flip Electronics	IC SRAM 18MBIT PARALLEL 119FPBGA	161
STK10C68-5C45M Flip Electronics	IC SRAM 64KBIT PARALLEL	484
MT48LC16M16A2B4-6AAAT:G Flip Electronics	IC DRAM 256MBIT PARALLEL 54VFBGA	137
PC48F4400P0VB0EF Flip Electronics	IC FLASH 512MBIT PAR 64EASYBGA	131
M25P80-VMN6TPBA Flip Electronics	IC FLASH 8MBIT SPI 75MHZ 8SO	10586
M29W320DB7AZA6E Flip Electronics	IC FLASH 32MBIT PARALLEL 63TFBGA	0
MTFC4GACAAAM-4M IT Flip Electronics	4GB, E MMC MEMORY	8
N25Q256A13E1240F Flip Electronics	IC FLASH 256MBIT SPI 24TPBGA	4946
S99FL256SAGMFIR01 Flip Electronics	INTEGRATED CIRCUIT	0
GS84018AGT-150I Flip Electronics	IC SRAM 4MBIT PARALLEL 100TQFP	29
N25Q512A83G1240F Flip Electronics	IC FLASH 512M SPI 24TPBGA	2390
575-A0113-02 Flip Electronics	INTEGRATED CIRCUIT	360
M29W128GL70ZA6F Flip Electronics	IC FLASH 128MBIT PARALLEL 64TBGA	2420
GS8321Z36GE-166IV Flip Electronics	IC SRAM 36MBIT PARALLEL 165FPBGA	32
JS28F128J3F75B TR Flip Electronics	IC FLASH 128MBIT PARALLEL 56TSOP	617
N25Q032A13ESF40F TR Flip Electronics	IC FLSH 32MBIT SPI 108MHZ 16SOP2	3000
N25Q256A13E1240F TR Flip Electronics	IC FLASH 256MBIT SPI 24TPBGA	4946
PC28F640J3F75B TR Flip Electronics	IC FLASH 64MBIT PAR 64EASYBGA	3000
M25P80-VMN6TPBA TR Flip Electronics	IC FLASH 8MBIT SPI 75MHZ 8SO	10780
PC28F640P30BF65B TR Flip Electronics	IC FLASH 64MBIT PAR 64EASYBGA	2000

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)