Memory

Part Number	Description / PDF	Quantity
S29AL016J70TFI010A Flip Electronics	IC FLASH 16MBIT PARALLEL 48TSOP	0
M29F200FT5AN6E2 Flip Electronics	IC FLASH 2MBIT PARALLEL 48TSOP	0
S99FL256SAGMFI003 Flip Electronics	INTEGRATED CIRCUIT	1450
PC28F064M29EWBA Flip Electronics	IC FLASH 64MBIT PARALLEL 64FBGA	1212
S29AL016J70BAI020 Flip Electronics	IC FLASH 16MBIT PARALLEL 48FBGA	4468
S99-50276 Flip Electronics	EOL PRUNE	0
PF48F4400P0VBQEF Flip Electronics	IC FLASH 512MBIT PARALLEL 88SCSP	0
S99GL128S90TFI010 Flip Electronics	PRODUCTION	141
MT41K256M16LY-093:N Flip Electronics	IC DRAM 4GBIT PARALLEL 96FBGA	0
GS88236BB-200I Flip Electronics	IC SRAM 9MBIT PARALLEL 119FPBGA	447
M29W400DB70N6F Flip Electronics	IC FLASH 4MBIT PARALLEL 48TSOP	0
MT46V32M8P-5B:M Flip Electronics	IC DRAM 256MBIT PARALLEL 66TSOP	0
GS72116AT-10 Flip Electronics	IC SRAM 2MBIT PARALLEL 44TQFP	95
N25Q512A13GF840F Flip Electronics	IC FLASH 512M SPI 108MHZ 8VDFPN	0
GS816118BD-150I Flip Electronics	IC SRAM 18MBIT PARALLEL 165FPBGA	4539
N25Q032A13ESF40F Flip Electronics	IC FLSH 32MBIT SPI 108MHZ 16SOP2	0
STK20C04-WF25I Flip Electronics	IC NVSRAM 4KBIT PARALLEL 28DIP	0
S25FL132K0XBHIS2 Flip Electronics	IC FLASH 32MBIT SPI/QUAD 24BGA	555
S99GL256P90TFIR10 Flip Electronics	INTEGRATED CIRCUIT	0
GS88036BGT-150I Flip Electronics	IC SRAM 9MBIT PARALLEL 100TQFP	359

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)