Memory

Part Number	Description / PDF	Quantity
S25FL128SDPBHB303 Cypress Semiconductor	IC FLASH 128MBIT SPI/QUAD 24BGA	0
S25FS128SDSBHI203 Cypress Semiconductor	IC FLASH 128MBIT SPI/QUAD 24BGA	0
S25FL256SDPMFIG13 Cypress Semiconductor	IC FLASH 256MBIT SPI/QUAD 16SOIC	0
S70GL02GS11FHI023 Cypress Semiconductor	IC FLASH 2GBIT PARALLEL 64FBGA	0
S26KL512SDABHA030 Cypress Semiconductor	IC FLASH 512MBIT PARALLEL 24FBGA	0
S25FL512SAGBHIC13 Cypress Semiconductor	IC FLASH 512MBIT SPI/QUAD 24BGA	0
FM24V05-G Cypress Semiconductor	IC FRAM 512KBIT I2C 3.4MHZ 8SOIC	579
S25FL064LABMFA013 Cypress Semiconductor	IC FLASH 64MBIT SPI/QUAD 8SOIC	1371
S29GL512S10FHSS30 Cypress Semiconductor	IC FLASH 512MBIT PARALLEL 64BGA	0
CY7C1350G-133AXC Cypress Semiconductor	NO WARRANTY	96
S29GL064N11FFIV23 Cypress Semiconductor	IC FLASH 64MBIT PARALLEL 64FBGA	0
S29GL256P90FFIR10A Cypress Semiconductor	IC FLASH 256MBIT PARALLEL 64FBGA	0
FM24V10-GTR Cypress Semiconductor	IC FRAM 1MBIT I2C 3.4MHZ 8SOIC	199
S70KS1281DPBHV020 Cypress Semiconductor	IC PSRAM 128MBIT PARALLEL 24FBGA	0
S25FS512SDSBHM213 Cypress Semiconductor	IC FLASH 512MBIT SPI/QUAD 24BGA	0
S29GL064S80TFIV63 Cypress Semiconductor	IC FLASH 64MBIT PARALLEL 56TSOP	0
S25FL128LAGBHI020 Cypress Semiconductor	IC FLASH 128MBIT SPI/QUAD 24BGA	122
S70FL256P0XMFI003 Cypress Semiconductor	IC FLASH 256MBIT SPI/QUAD 16SOIC	2900
S29GL01GS10FHSS43 Cypress Semiconductor	IC FLASH 1GBIT PARALLEL 64FBGA	0
S27KL0641DABHA033 Cypress Semiconductor	IC PSRAM 64MBIT PARALLEL 24FBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)