Memory

Image Part Number Description / PDF Quantity Rfq
M24C64-DFMN6TP

M24C64-DFMN6TP

STMicroelectronics

IC EEPROM 64KBIT I2C 1MHZ 8SO

4530

M95128-DRDW3TP/K

M95128-DRDW3TP/K

STMicroelectronics

IC EEPROM 128KBIT SPI 8TSSOP

487

M24C64-DRMN8TP/K

M24C64-DRMN8TP/K

STMicroelectronics

IC EEPROM 64KBIT I2C 1MHZ 8SO

1354

M95040-DRDW8TP/K

M95040-DRDW8TP/K

STMicroelectronics

IC EEPROM 4KBIT SPI 20MHZ 8TSSOP

0

M24C64-DRDW3TP/K

M24C64-DRDW3TP/K

STMicroelectronics

IC EEPROM 64KBIT I2C 1MHZ 8TSSOP

2423

M95320-DRMN8TP/K

M95320-DRMN8TP/K

STMicroelectronics

IC EEPROM 32KBIT SPI 20MHZ 8SO

198

M24C64-WMN6P

M24C64-WMN6P

STMicroelectronics

IC EEPROM 64KBIT I2C 1MHZ 8SO

1049

M24C32-XMC5TG

M24C32-XMC5TG

STMicroelectronics

IC EEPROM 32KBIT I2C 8UFDFPN

0

M48Z35Y-70PC1

M48Z35Y-70PC1

STMicroelectronics

IC NVSRAM 256KBIT PAR 28PCDIP

364

M95040-DRMN3TP/K

M95040-DRMN3TP/K

STMicroelectronics

IC EEPROM 4KBIT SPI 20MHZ 8SO

0

M24C02-WMN6P

M24C02-WMN6P

STMicroelectronics

IC EEPROM 2KBIT I2C 400KHZ 8SO

15081

M93C76-RMN3TP/K

M93C76-RMN3TP/K

STMicroelectronics

IC EEPROM 4KBIT SPI 2MHZ 8SO

4046

M24C01-RMN6P

M24C01-RMN6P

STMicroelectronics

IC EEPROM 1KBIT I2C 400KHZ 8SO

9536

M24C01-RMN6TP

M24C01-RMN6TP

STMicroelectronics

IC EEPROM 1KBIT I2C 400KHZ 8SO

15633

M24C32-FDW5TP

M24C32-FDW5TP

STMicroelectronics

IC EEPROM 32KBIT I2C 1MHZ 8TSSOP

5660

M24C64-DRMN3TP/K

M24C64-DRMN3TP/K

STMicroelectronics

IC EEPROM 64KBIT I2C 1MHZ 8SO

0

M95020-RDW6TP

M95020-RDW6TP

STMicroelectronics

IC EEPROM 2KBIT SPI 20MHZ 8TSSOP

7311

M24M01-DFMN6TP

M24M01-DFMN6TP

STMicroelectronics

IC EEPROM 1MBIT I2C 1MHZ 8SO

1728

M95M01-DFCS6TP/K

M95M01-DFCS6TP/K

STMicroelectronics

IC EEPROM 1MBIT SPI 16MHZ 8WLCSP

3150

M95020-WMN6TP

M95020-WMN6TP

STMicroelectronics

IC EEPROM 2KBIT SPI 20MHZ 8SO

7088

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
DRAM (Dynamic RAM)High-density, low-cost, requires periodic refreshPCs, Servers, Graphics Cards
NAND FlashNon-volatile, high endurance, block-level accessSSDs, USB Drives, Mobile Storage
SRAM (Static RAM)High-speed, low density, no refresh requiredCache Memory, Networking Equipment
NOR FlashRandom access, execute-in-place capabilityEmbedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)Non-volatile, unlimited endurance, low powerIoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

  • Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
  • Address Decoder: Selects specific memory locations
  • I/O Circuits: Data input/output interfaces
  • Control Logic: Manages read/write operations and timing
  • Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

ParameterDescriptionImportance
Storage CapacityData volume (Gb/GiB)Determines system memory limits
Access Timens/predictable latencyImpacts processing speed
Power ConsumptionmW/MHzAffects battery life and thermal design
EnduranceP/E cycles (Flash)Dictates product lifespan
Data RetentionYears (non-volatile)Critical for long-term storage

5. Application Areas

  • Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
  • Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
  • Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
  • Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

ManufacturerRepresentative Products
Samsung ElectronicsV-NAND (9x-layer), LPDDR5X
SK hynixHBM3 (8GB/s bandwidth), GDDR6
Microchip TechnologySerial NOR Flash (SST26)
Kioxia CorporationBiCS FLASH (3D NAND)
Infineon TechnologiesMRAM (40nm process)

7. Selection Recommendations

Key considerations:

  • Match memory type to application requirements (e.g., NOR Flash for code storage)
  • Evaluate bandwidth vs. latency tradeoffs
  • Analyze temperature and vibration specifications
  • Assess long-term supply stability
  • Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

  • 3D NAND scaling beyond 200 layers
  • Emerging memories (ReRAM, PCM) for AI acceleration
  • Package-on-Package (PoP) integration
  • AI-optimized memory architectures (Processing-in-Memory)
  • Green manufacturing processes (EUV lithography)
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