Memory

Part Number	Description / PDF	Quantity
M95128-DRMN8TP/K STMicroelectronics	IC EEPROM 128KBIT SPI 20MHZ 8SO	107809
M95640-WDW6TP STMicroelectronics	IC EEPROM 64KBIT SPI 8TSSOP	1568
M24C02-FMN6TP STMicroelectronics	IC EEPROM 2KBIT I2C 400KHZ 8SO	0
M93C56-RDW3TP/K STMicroelectronics	IC EEPROM 2KBIT SPI 2MHZ 8TSSOP	1190
M95020-RMB6TG STMicroelectronics	IC EEPROM 2KBIT SPI 8UFDFPN	0
M95M01-RMN6TP STMicroelectronics	IC EEPROM 1MBIT SPI 16MHZ 8SO	12434
M24C01-RDW6TP STMicroelectronics	IC EEPROM 1KBIT I2C 8TSSOP	2656
M24C16-RMC6TG STMicroelectronics	IC EEPROM 16KBIT I2C 400KHZ 8MLP	3925
M24C16-DFCU6TP/K STMicroelectronics	IC EEPROM 16KBIT I2C 1MHZ 4WLCSP	0
M24C08-FMH6TG STMicroelectronics	IC EEPROM 8KBIT I2C 5UFDFPN	148
M48Z58-70PC1 STMicroelectronics	IC NVSRAM 64KBIT PAR 28PCDIP	748
M24256-BFMC6TG STMicroelectronics	IC EEPROM 256KBIT I2C 1MHZ 8MLP	4538
M24C08-FMC6TG STMicroelectronics	IC EEPROM 8KBIT I2C 8UFDFPN	651
M24C08-WMN6P STMicroelectronics	IC EEPROM 8KBIT I2C 400KHZ 8SO	5323
M24C64-RMN6TP STMicroelectronics	IC EEPROM 64KBIT I2C 1MHZ 8SO	0
M95640-DRMN8TP/K STMicroelectronics	IC EEPROM 64KBIT SPI 16MHZ 8SO	2380
M93S56-WMN6P STMicroelectronics	IC EEPROM 2KBIT SPI 2MHZ 8SO	3118
M24C02-FMN6P STMicroelectronics	IC EEPROM 2KBIT I2C 400KHZ 8SO	1614
M24256-BRDW6P STMicroelectronics	IC EEPROM 256KBIT I2C 8TSSOP	0
M24C16-RMN6P STMicroelectronics	IC EEPROM 16KBIT I2C 400KHZ 8SO	6308

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)