Memory

Image	Part Number	Description / PDF	Quantity	Rfq
	SM662GXB BDS ST602 Silicon Motion	FERRI EMMC 10GB 3D TLC [PSEUDO-S	0
	SM671PXC ADS TU115 Silicon Motion	FERRI-UFS 64GB 3D TLC	0
	SM662GED BDS ST602 Silicon Motion	FERRI EMMC 40GB 3D TLC + EXT. TE	0
	SM662GXA BDS ST617 Silicon Motion	FERRI EMMC 5GB 3D TLC [PSEUDO-SL	0
	SM662PXC BDS ST602 Silicon Motion	FERRI EMMC 20GB 3D TLC [PSEDUO-S	0
	SM662PEC BDS ST602 Silicon Motion	FERRI EMMC 20GB 3D TLC + EXT. TE	0
	SM671PEA ADS TS823 Silicon Motion	FERRI-UFS 16GB 3D TLC + EXT. TEM	0
	SM671PXB ADS TU115 Silicon Motion	FERRI-UFS 32GB 3D TLC	0
	SM662PXB BDS TTC29 Silicon Motion	FERRI EMMC 32GB 3D TLC (153 BALL	0
	SM671PXA ADS TS823 Silicon Motion	FERRI-UFS 16GB 3D TLC	0
	SM662PEE BDS TTX18 Silicon Motion	FERRI EMMC 256GB 3D TLC + EXT. T	0
	SM671PXD ADS TU115 Silicon Motion	FERRI-UFS 128GB 3D TLC	0
	SM662GXA BDS TT904 Silicon Motion	FERRI EMMC 16GB 3D TLC (100 BALL	0
	SM671PEB ADS TU115 Silicon Motion	FERRI-UFS 32GB 3D TLC + EXT. TEM	0
	SM662GEB BDS ST602 Silicon Motion	FERRI EMMC 10GB 3D TLC + EXT. TE	0
	SM662PXE BDS TTX18 Silicon Motion	FERRI EMMC 256GB 3D TLC (153 BAL	0
	SM662GXE BDS TTX18 Silicon Motion	FERRI EMMC 256GB 3D TLC (100 BAL	0
	SM661PX8-AC Silicon Motion	FERRI-EMMC BGA 153-B EMMC 4.5 ML	0
	SM662PXB-BDST Silicon Motion	FERRI-EMMC BGA 153-B EMMC 3D TLC	0
	SM661GE8-AC Silicon Motion	FERRI-EMMC BGA 100-B EMMC 4.5 ML	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)