Memory

Image	Part Number	Description / PDF	Quantity	Rfq
	SM662PED BDS ST602 Silicon Motion	FERRI EMMC 40GB 3D TLC + EXT. TE	0
	SM662PEC BDS TTC29 Silicon Motion	FERRI EMMC 64GB 3D TLC + EXT. TE	0
	SM662GEA BDS TT904 Silicon Motion	FERRI EMMC 16GB 3D TLC + EXT. TE	0
	SM662GXC BDS ST602 Silicon Motion	FERRI EMMC 20GB 3D TLC [PSEUDO-S	0
	SM662GXC BDS TTC29 Silicon Motion	FERRI EMMC 64GB 3D TLC (100 BALL	0
	SM662GEC BDS ST602 Silicon Motion	FERRI EMMC 20GB 3D TLC + EXT. TE	0
	SM662GEB BDS TTC29 Silicon Motion	FERRI EMMC 32GB 3D TLC + EXT. TE	0
	SM662GXB BDS TTC29 Silicon Motion	FERRI EMMC 32GB 3D TLC (100 BALL	0
	SM662GXE BDS ST706 Silicon Motion	FERRI EMMC 80GB 3D TLC [PSEUDO-S	0
	SM662GED BDS TTC29 Silicon Motion	FERRI EMMC 128GB 3D TLC + EXT. T	0
	SM662PEB BDS ST602 Silicon Motion	FERRI EMMC 10GB 3D TLC + EXT. TE	0
	SM662GEA BDS ST617 Silicon Motion	FERRI EMMC 5GB 3D TLC + EXT. TEM	0
	SM671PED ADS TU115 Silicon Motion	FERRI-UFS 128GB 3D TLC + EXT. TE	0
	SM662PXC BDS TTC29 Silicon Motion	FERRI EMMC 64GB 3D TLC (153 BALL	0
	SM671PXE ADS TU115 Silicon Motion	FERRI-UFS 256GB 3D TLC	0
	SM662PEE BDS ST706 Silicon Motion	FERRI EMMC 80GB 3D TLC + EXT. TE	0
	SM662GEC BDS TTC29 Silicon Motion	FERRI EMMC 64GB 3D TLC + EXT. TE	0
	SM662PED BDS TTC29 Silicon Motion	FERRI EMMC 128GB 3D TLC + EXT. T	0
	SM662PXD BDS TTC29 Silicon Motion	FERRI EMMC 128GB 3D TLC (153 BAL	0
	SM671PEE ADS TU115 Silicon Motion	FERRI-UFS 256GB 3D TLC + EXT. TE	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)