Memory

Part Number	Description / PDF	Quantity
CY7C187-15VC Rochester Electronics	STANDARD SRAM, 64KX1, 15NS, CMOS	518
CY62126DV30L-55ZIT Rochester Electronics	SRAM CHIP ASYNC SINGLE 3V 1M BIT	10000
CY62136CV30LL-70BVI Rochester Electronics	STANDARD SRAM, 128KX16	2419
CY27H010-45WMB Rochester Electronics	UVPROM, 128KX8, 45NS CDIP32	338
CY62148DV30LL-70BVXI Rochester Electronics	STANDARD SRAM, 512KX8, 70NS	4804
CY27H010-45PC Rochester Electronics	OTP ROM, 128KX8, 45NS PDIP32	249
CY7C143-55JC Rochester Electronics	DUAL-PORT SRAM, 2KX16, 55NS	92
CY7C1021CV33-15ZCT Rochester Electronics	SRAM CHIP ASYNC SINGLE 3.3V 1M B	5717
CY7C144-15AI Rochester Electronics	DUAL-PORT SRAM, 8KX8, 15NS	415
CY62127DV30LL-70BVI Rochester Electronics	STANDARD SRAM, 64KX16, 70NS	2645
CY7C1021BN-15ZCT Rochester Electronics	STANDARD SRAM, 64KX16, 15NS	17000
CY7C1370B-200AC Rochester Electronics	ZBT SRAM, 512KX36, 3NS	24
CY27C512-55ZC Rochester Electronics	OTP ROM, 64KX8, 55NS PDSO28	97
CYD09S72V18-167BGXC Rochester Electronics	DUAL-PORT SRAM, 128KX72, 11NS PB	38
CY7C195-35VC Rochester Electronics	STANDARD SRAM, 64KX4, 35NS	2377
CY62157CV30LL-70BAI Rochester Electronics	STANDARD SRAM, 512KX16, 70NS	24164
CY7C1049BV33-20VCT Rochester Electronics	STANDARD SRAM, 512KX8, 20NS	39500
27S185APC Rochester Electronics	AM27S185 - OTP ROM, 2KX4 BIPOLAR	1429
CY7C1011CV33-10ZI Rochester Electronics	STANDARD SRAM, 128KX16	69
CY7C1512-70ZI Rochester Electronics	STANDARD SRAM, 64KX8, 70NS	82

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)