Memory

Part Number	Description / PDF	Quantity
CY7C182-45VC Rochester Electronics	CACHE SRAM, 8KX9, 45NS PDSO28	725
CY14B101NA-ZS45XIKA Rochester Electronics	NON-VOLATILE SRAM, 64KX16, 45NS	368
CY7C1363A-117AJCT Rochester Electronics	STANDARD SRAM, 512KX18, 7NS	4500
CY27H010-30PC Rochester Electronics	OTP ROM, 128KX8, 30NS PDIP32	801
CY7C1620KV18-300BZC Rochester Electronics	SYNC RAM	119
CY14B101Q3-SFXI8 Rochester Electronics	NON-VOLATILE SRAM	1982
CY62136CV30LL-70BAIT Rochester Electronics	STANDARD SRAM, 128KX16	18000
CY7C194-35VC Rochester Electronics	STANDARD SRAM, 64KX4, 35NS, CMOS	21613
CY7C1334-80AC Rochester Electronics	ZBT SRAM, 64KX32, 7NS	2525
CY62158DV30LL-70ZSXI Rochester Electronics	STANDARD SRAM, 1MX8, 70NS	1355
CY7C1399B-15VI Rochester Electronics	CACHE SRAM, 32KX8, 15NS PDSO28	2058
CY7C274-55JC Rochester Electronics	OTP ROM, 32KX8, 55NS PQCC32	308
CY7C1313AV18-167BZC Rochester Electronics	QDR SRAM, 1MX18, 0.5NS	3323
CY62128BNLL-70SC Rochester Electronics	IC SRAM 1MBIT PARALLEL 32SOIC	157
CY7C1011CV33-12AIT Rochester Electronics	STANDARD SRAM, 128KX16	3081
CY7C1399BL-15VXC Rochester Electronics	CACHE SRAM, 32KX8, 15NS PDSO28	5838
CY7C1049BN-15VXC Rochester Electronics	STANDARD SRAM, 512KX8, 15NS	165
CY62148CV30LL-55BAI Rochester Electronics	STANDARD SRAM, 512KX8, 55NS	664
CY7B135-35JI Rochester Electronics	DUAL-PORT SRAM, 4KX8, 35NS,	204
CY62128DV30L-55ZAI Rochester Electronics	STANDARD SRAM, 128KX8	5349

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)