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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FD1000R17IE4DB2BOSA1

FD1000R17IE4DB2BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 1390A 6250W

0
FS100R17N3E4PB11BPSA1

FS100R17N3E4PB11BPSA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER ECONO

0
DF600R12N2E4PB11BPSA1

DF600R12N2E4PB11BPSA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER ECONO

0
BSM200GB120DN2HOSA1

BSM200GB120DN2HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 290A 1400W

0
FS100R12KT4B11BOSA1

FS100R12KT4B11BOSA1

IR (Infineon Technologies)

IGBT MODULE

55
FS100R12N2T4B11BOSA1

FS100R12N2T4B11BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 100A 20MW ECONO

0
FB20R06W1E3B11HOMA1

FB20R06W1E3B11HOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 29A 94W

0
BSM300GA170DLCHOSA1

BSM300GA170DLCHOSA1

IR (Infineon Technologies)

IGBT MODULE

903
FS450R12KE4BOSA1

FS450R12KE4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 675A 2250W

0
FF450R33T3E3P2BPSA1

FF450R33T3E3P2BPSA1

IR (Infineon Technologies)

IGBT MOD 3300V 450A AGXHP100-3

0
DF600R12IP4DVBOSA1

DF600R12IP4DVBOSA1

IR (Infineon Technologies)

IGBT MODULE VCES 1200V 600A

0
BSM100GB120DN2KHOSA1

BSM100GB120DN2KHOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 145A 700W

0
DDB2U30N08VRBOMA1307

DDB2U30N08VRBOMA1307

IR (Infineon Technologies)

IGBT MODULE

40
FP75R12KT4B16BOSA1

FP75R12KT4B16BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 150A 385W

0
FZ750R65KE3C1NOSA1

FZ750R65KE3C1NOSA1

IR (Infineon Technologies)

IHV IHM T XHP 3 3-6 5K

0
BSM75GD120DLCBOSA1

BSM75GD120DLCBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 125A 500W

0
BSM100GD60DLCBOSA1

BSM100GD60DLCBOSA1

IR (Infineon Technologies)

IGBT MODULE

90
FF900R12ME7B11NPSA1

FF900R12ME7B11NPSA1

IR (Infineon Technologies)

MEDIUM POWER ECONO

0
BSM100GAL120DLCKHOSA1

BSM100GAL120DLCKHOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 205A 835W

0
FD16001200R17KF6CB2NOSA1

FD16001200R17KF6CB2NOSA1

IR (Infineon Technologies)

IGBT MODULE

22

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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