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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FF1500R12IE5PBPSA1

FF1500R12IE5PBPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 1500A AGPRIME3+-5

3
FP35R12KT4B11BOSA1

FP35R12KT4B11BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 35A 210W

8
FZ1200R33KF2CNOSA1

FZ1200R33KF2CNOSA1

IR (Infineon Technologies)

IGBT MODULE 3300V 2000A

0
FP50R12KT4PB11BPSA1

FP50R12KT4PB11BPSA1

IR (Infineon Technologies)

MOD IGBT LOW PWR ECONO2-4

0
FD300R06KE3HOSA1

FD300R06KE3HOSA1

IR (Infineon Technologies)

FD300R06 - IGBT MODULE

45
FD1000R17IE4BOSA2

FD1000R17IE4BOSA2

IR (Infineon Technologies)

FD1000R17 - IGBT MODULE

104
FS100R17N3E4B11BOSA1

FS100R17N3E4B11BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 100A 600W

0
FF600R12IP4VBOSA1

FF600R12IP4VBOSA1

IR (Infineon Technologies)

FF600R12 - IGBT MODULE

45
FS50R12W2T4BOMA1

FS50R12W2T4BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 83A 335W

15
FS300R17KE4BOSA1

FS300R17KE4BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 375A 1800W

0
FS400R07A3E3H6BPSA1

FS400R07A3E3H6BPSA1

IR (Infineon Technologies)

IGBT MODULE 650V 400A

0
DDB6U134N16RRB11BPSA1

DDB6U134N16RRB11BPSA1

IR (Infineon Technologies)

DDB6U134N16 - BRIDGE RECTIFIER &

49
FF1200R17IP5PBPSA1

FF1200R17IP5PBPSA1

IR (Infineon Technologies)

IGBT

3
FS75R12KE3B9BOSA1

FS75R12KE3B9BOSA1

IR (Infineon Technologies)

FS75R12 - IGBT MODULE

4
FS150R12KT4B9BOSA1

FS150R12KT4B9BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 150A 750W

0
FP50R12W2T7B11BOMA1

FP50R12W2T7B11BOMA1

IR (Infineon Technologies)

LOW POWER EASY

45
F3L100R07W2E3B11BOMA1

F3L100R07W2E3B11BOMA1

IR (Infineon Technologies)

IGBT MOD 650V 117A 300W

15
FF900R12IP4DVBOSA1

FF900R12IP4DVBOSA1

IR (Infineon Technologies)

FF900R12 - INSULATED GATE BIPOLA

15
FP10R06W1E3B11BOMA1

FP10R06W1E3B11BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 16A 68W

0
FF400R12KE3HOSA1

FF400R12KE3HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 580A 2000W

31

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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