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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FP35R12W2T4PBPSA1

FP35R12W2T4PBPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 70A 20MW

14
FS770R08A6P2BBPSA1

FS770R08A6P2BBPSA1

IR (Infineon Technologies)

HYBRID PACK DRIVE

0
FS50R07N2E4

FS50R07N2E4

IR (Infineon Technologies)

IGBT MODULE

907
FS75R12KT4B15BOSA1

FS75R12KT4B15BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 75A 385W

12
FF400R12KE3B2HOSA1

FF400R12KE3B2HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 580A 2000W

0
FF600R17ME4PB11BOSA1

FF600R17ME4PB11BOSA1

IR (Infineon Technologies)

IGBT MODULE VCES 600V 600A

0
DF300R12KE3HOSA1

DF300R12KE3HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 480A 1470W

0
FF1200R12IE5PBPSA1

FF1200R12IE5PBPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 2400A 20MW

3
FP50R12KT4PBPSA1

FP50R12KT4PBPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 100A 20MW

0
FP30R06W1E3B11BOMA1

FP30R06W1E3B11BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 37A 115W

0
FF800R12KE3NOSA1

FF800R12KE3NOSA1

IR (Infineon Technologies)

FF800R12 - INSULATED GATE BIPOLA

2
F3L300R12PT4B26COSA1

F3L300R12PT4B26COSA1

IR (Infineon Technologies)

IGBT MOD 1200V 460A 1650W

0
FF600R12ME4BOSA1

FF600R12ME4BOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 4050W

60
FZ2400R17HE4B9HOSA2

FZ2400R17HE4B9HOSA2

IR (Infineon Technologies)

FZ2400R17 - IGBT MODULE

23
FS75R07W2E3B11ABOMA1

FS75R07W2E3B11ABOMA1

IR (Infineon Technologies)

IGBT MODULES

15
FP35R12W2T7B11BOMA1

FP35R12W2T7B11BOMA1

IR (Infineon Technologies)

LOW POWER EASY

0
FZ1600R12HP4HOSA2

FZ1600R12HP4HOSA2

IR (Infineon Technologies)

FZ1600R12 - IGBT MODULE

53
FS100R07N2E4B11BOSA1

FS100R07N2E4B11BOSA1

IR (Infineon Technologies)

IGBT MOD 650V 125A 20MW

0
6MS30017E43W38169NOSA1

6MS30017E43W38169NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 1800A

0
FS35R12W1T4B11BOMA1

FS35R12W1T4B11BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 65A 225W

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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