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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FS35R12KT3BOSA1

FS35R12KT3BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 55A 210W

10
FS50R06KE3BOSA1

FS50R06KE3BOSA1

IR (Infineon Technologies)

IGBT MODULE 600V 70A 190W

0
FZ2400R17HP4HOSA2

FZ2400R17HP4HOSA2

IR (Infineon Technologies)

FZ2400R17 - IGBT MODULE

0
FS20R06W1E3B11BOMA1

FS20R06W1E3B11BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 35A 135W

0
FP10R12W1T4BOMA1

FP10R12W1T4BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 20A 105W

22
2ED300C17SROHSBPSA1

2ED300C17SROHSBPSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 30A

36
F3L300R12MT4B23BOSA1

F3L300R12MT4B23BOSA1

IR (Infineon Technologies)

F3L300R12 - IGBT MODULE

40
FD16001200R17HP4B2BOSA2

FD16001200R17HP4B2BOSA2

IR (Infineon Technologies)

IGBT MODULE VCES 1700V 1600A

0
DF200R12KE3HOSA1

DF200R12KE3HOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 1040W

0
FF650R17IE4DB2BOSA1

FF650R17IE4DB2BOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 4150W

0
FZ2400R12HE4B9HOSA2

FZ2400R12HE4B9HOSA2

IR (Infineon Technologies)

FZ2400R12 - IGBT MODULE

109
FS400R12A2T4BOSA1

FS400R12A2T4BOSA1

IR (Infineon Technologies)

IGBT MODULES

3
IFF2400P17AE4BPSA1

IFF2400P17AE4BPSA1

IR (Infineon Technologies)

IFF2400P17 - AC/DC POWER MODULES

5
F3L25R12W1T4B27BOMA1

F3L25R12W1T4B27BOMA1

IR (Infineon Technologies)

MODULE IGBT 1200V EASY1B-2

24
FS100R17N3E4BOSA1

FS100R17N3E4BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 100A 600W

7
FZ500R65KE3NOSA1

FZ500R65KE3NOSA1

IR (Infineon Technologies)

IGBT MODULE 6500V 1000A

0
FZ400R12KP4HOSA1

FZ400R12KP4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 400A 2400W

0
F475R12KS4B11BOSA1

F475R12KS4B11BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 100A 500W

0
6PS18012E4FG35689NWSA1

6PS18012E4FG35689NWSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 729A

0
IM240M6Z1BALMA1

IM240M6Z1BALMA1

IR (Infineon Technologies)

IGBT MODULE 600V 8.9W 23SOP

240

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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