Transistors - IGBTs

Transistors - IGBTs - Modules

Part Number	Description / PDF	Quantity
MG12150W-XN2MM Wickmann / Littelfuse	IGBT MOD 1200V 200A 625W	55
IXBN75N170 Wickmann / Littelfuse	IGBT MOD 1700V 145A 625W SOT227B	970
MIXA40WB1200TED Wickmann / Littelfuse	IGBT MODULE 1200V 60A 195W E2	6
IXYN100N120C3H1 Wickmann / Littelfuse	IGBT MOD 1200V 134A 690W SOT227B	88
MUBW10-06A7 Wickmann / Littelfuse	IGBT MODULE 600V 20A 85W E2	0
MG12100S-BN2MM Wickmann / Littelfuse	IGBT MODULE 1200V 140A 450W S3	21
MG12600WB-BR2MM Wickmann / Littelfuse	IGBT MODULE 1200V 750A 2500W WB	0
MG12100W-XN2MM Wickmann / Littelfuse	IGBT MOD 1200V 140A 450W	0
IXGN400N60B3 Wickmann / Littelfuse	IGBT MOD 600V 430A 1000W SOT227B	9140
IXYN100N120C3 Wickmann / Littelfuse	IGBT MOD 1200V 152A 830W SOT227B	0
IXYN140N120A4 Wickmann / Littelfuse	IGBT 140A 1200V SOT227B MINIBLOC	1080
IXYN120N120C3 Wickmann / Littelfuse	IGBT MOD 1200V 240A SOT227B	4160
MG12150S-BN2MM Wickmann / Littelfuse	IGBT MODULE 1200V 200A 625W S3	10
MG1225H-XBN2MM Wickmann / Littelfuse	IGBT MOD 1200V 25A 105W	0
MG06100S-BN4MM Wickmann / Littelfuse	IGBT MODULE 600V 100A 330W S3	0
IXYN82N120C3H1 Wickmann / Littelfuse	IGBT MOD 1200V 105A 500W SOT227B	38170
IXGN200N60B3 Wickmann / Littelfuse	IGBT MOD 600V 300A 830W SOT227B	229
IXGN82N120B3H1 Wickmann / Littelfuse	IGBT MOD 1200V 145A 595W SOT227B	0
MG12200D-BN2MM Wickmann / Littelfuse	IGBT MODULE 1200V 290A 1050W D3	0
MG12300WB-BN2MM Wickmann / Littelfuse	IGBT MODULE 1200V 500A 1400W WB	0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard IGBT Modules	General-purpose, balanced conduction/switching losses	Industrial motor drives, HVAC systems
High-Speed IGBTs	Optimized for switching frequencies >20kHz	Welding inverters, induction heating
Enhanced Dynamic IGBTs	Reduced tail current for lower switching losses	Electric vehicle (EV) on-board chargers
Trench IGBTs	Vertical trench gate structure for improved efficiency	Solar inverters, energy storage systems
Double-Sided Cooling Modules	Thermal management with cooling on both sides	High-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al₂O₃ or Si₃N₄). Key structural elements include:

Chip-level integration of IGBT and diode cells
DBC (Direct Bonded Copper) substrate for thermal conductivity
Thermoplastic/epoxy encapsulation for insulation
Aluminum wire bonds for die interconnection
Integrated temperature sensors in advanced modules

4. Key Technical Specifications

Parameter	Description	Importance
Rated Collector Current (I_C)	Maximum continuous operating current	Determines power handling capability
Breakdown Voltage (V_CE)	Max voltage before conduction	System voltage rating compatibility
Conduction Voltage Drop	Voltage loss during on-state	Impacts efficiency and thermal design
Switching Losses (E_on/E_off)	Energy loss during state transitions	Dictates maximum switching frequency
Operating Temperature Range	Valid junction temperature range	Reliability and lifespan factor
Isolation Voltage	Dielectric strength between layers	Safety compliance for high-voltage systems

5. Application Areas

Industrial: Motor drives, CNC machines, welding equipment
Automotive: EV traction inverters, PHEV battery management
Energy: Solar PV inverters, wind turbine converters
Consumer: High-end home appliances with variable speed drives
Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Infineon	FF600R12KE4	600A/1200V, 3-level topology, 175 C rating
ON Semiconductor	NVHL015AN	150A/1200V, automotive qualified
Mitsubishi Electric	CM400DY-34A	400A/1700V, double-sided cooling
Fuji Electric	2MBI150XAA120-50	150A/1200V, intelligent power module
STMicroelectronics	STGF8NC60KD	8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

Matching voltage/current ratings with system requirements
Switching frequency vs. conduction loss trade-off
Thermal management capabilities (R_th values)
Short-circuit withstand capability
Package dimensions and cooling interface compatibility
Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

Transition to SiC/GaN hybrid modules for higher efficiency
Development of 3D packaging for reduced parasitic inductance
Integration of gate drivers and sensors in smart modules
Growing adoption in EV charging infrastructure (800V+ systems)
Advancements in sintering technology for die attach reliability