Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
MITA300RF1700PTED

MITA300RF1700PTED

Wickmann / Littelfuse

IGBT MODULE - OTHERS E2-PACK-PFP

0

MUBW15-12A6K

MUBW15-12A6K

Wickmann / Littelfuse

IGBT MODULE 1200V 19A 90W E1

10

MIXA60W1200TED

MIXA60W1200TED

Wickmann / Littelfuse

IGBT MODULE 1200V 85A 290W E2

0

MIXA150R1200VA

MIXA150R1200VA

Wickmann / Littelfuse

IGBT MOD 1200V 220A 695W V1A-PAK

0

IXA60IF1200NA

IXA60IF1200NA

Wickmann / Littelfuse

IGBT MOD 1200V 88A 290W SOT227B

43

MG17150D-BN4MM

MG17150D-BN4MM

Wickmann / Littelfuse

IGBT MODULE 1700V 250A 890W D3

0

MWI80-12T6K

MWI80-12T6K

Wickmann / Littelfuse

IGBT MODULE 1200V 80A 270W E1

170

MWI35-12A7

MWI35-12A7

Wickmann / Littelfuse

IGBT MODULE 1200V 62A 280W E2

0

MIXG330PF1200TSF

MIXG330PF1200TSF

Wickmann / Littelfuse

IGBT MODULE - PHASELEG SIMBUS F-

39

MID150-12A4

MID150-12A4

Wickmann / Littelfuse

IGBT MOD 1200V 180A 760W Y3DCB

44

MIXA81H1200EH

MIXA81H1200EH

Wickmann / Littelfuse

IGBT MODULE 1200V 120A 390W E3

0

MWI15-12A7

MWI15-12A7

Wickmann / Littelfuse

IGBT MODULE 1200V 30A 140W E2

724

MII300-12A4

MII300-12A4

Wickmann / Littelfuse

IGBT MOD 1200V 330A 1380W Y3DCB

36

MII200-12A4

MII200-12A4

Wickmann / Littelfuse

IGBT MOD 1200V 270A 1130W Y3DCB

10

MIXG490PF1200TSF

MIXG490PF1200TSF

Wickmann / Littelfuse

IGBT MODULE - PHASELEG SIMBUS F-

15

MIXG240W1200PZTEH

MIXG240W1200PZTEH

Wickmann / Littelfuse

IGBT MODULE - SIXPACK E3-PACK-PF

0

MIXG70W1200TED

MIXG70W1200TED

Wickmann / Littelfuse

IGBT MODULE - SIXPACK E2-PACK-PF

132

MG17300D-BN4MM

MG17300D-BN4MM

Wickmann / Littelfuse

IGBT MODULE 1700V 400A 1450W D3

0

MIXA61WB1200TEH

MIXA61WB1200TEH

Wickmann / Littelfuse

IGBT MODULE - CBI E3-PACK-PFP

80

MIXG240W1200TEH

MIXG240W1200TEH

Wickmann / Littelfuse

IGBT MODULE - SIXPACK E3-PACK-PF

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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