Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
NTE2388 NTE Electronics, Inc.	MOSFET N-CHANNEL 200V 18A TO220	1343
NTE2383 NTE Electronics, Inc.	MOSFET P-CH 100V 10.5A TO220	30
NTE2934 NTE Electronics, Inc.	MOSFET N-CH 400V 11.5A TO3PML	457
NTE2922 NTE Electronics, Inc.	MOSFET N-CHANNEL 400V 16A TO3P	745
NTE464 NTE Electronics, Inc.	MOSFET-P CHANNEL AMP/SW	60
NTE2393 NTE Electronics, Inc.	MOSFET N-CHANNEL 500V 10A TO3P	130
NTE2387 NTE Electronics, Inc.	MOSFET N-CHANNEL 800V 4.1A TO220	162
NTE2973 NTE Electronics, Inc.	MOSFET-N-CHAN ENHANCEMENT TO-3P	226
NTE455 NTE Electronics, Inc.	MOSFET-DUAL GATE N-CH	404
NTE2385 NTE Electronics, Inc.	MOSFET N-CHANNEL 500V 8A TO220	424
NTE2375 NTE Electronics, Inc.	MOSFET N-CHANNEL 100V 41A TO247	279
NTE2394 NTE Electronics, Inc.	MOSFET N-CHANNEL 500V 14A TO3P	105
NTE2371 NTE Electronics, Inc.	MOSFET P-CHANNEL 100V 19A TO220	381
NTE2399 NTE Electronics, Inc.	MOSFET N-CHANNEL 1KV 3.1A TO220	252
NTE492 NTE Electronics, Inc.	MOSFET N-CHANNEL 200V 250MA TO92	0
NTE2395 NTE Electronics, Inc.	MOSFET N-CHANNEL 60V 50A TO220	675
NTE491 NTE Electronics, Inc.	MOSFET N-CHANNEL 60V 200MA TO92	402
NTE2384 NTE Electronics, Inc.	MOSFET N-CHANNEL 900V 6A TO3	58
NTE2930 NTE Electronics, Inc.	MOSFET N-CHANNEL 100V 31A TO3PML	364
NTE2931 NTE Electronics, Inc.	MOSFET N-CH 200V 12.8A TO3PML	221

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS