Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IRF350 NTE Electronics, Inc.	MOSFET N-CH 400V 14A TO3	104
NTE2991 NTE Electronics, Inc.	MOSFET PWR N-CH 55V 110A TO-220	41
NTE2374 NTE Electronics, Inc.	MOSFET N-CHANNEL 200V 18A TO220	130
NTE2381 NTE Electronics, Inc.	MOSFET P-CHANNEL 500V 2.7A TO220	340
NTE491SM NTE Electronics, Inc.	MOSFET N-CHANNEL 60V 115MA SOT23	502
NTE2987 NTE Electronics, Inc.	MOSFET N-CH 100V 20A TO220	656
NTE2984 NTE Electronics, Inc.	MOSFET-PWR N-CHAN 60V 17A TO-220	420
NTE2392 NTE Electronics, Inc.	MOSFET N-CHANNEL 100V 40A TO3	917
NTE2935 NTE Electronics, Inc.	MOSFET N-CH 500V 6.2A TO3PML	797
NTE2396 NTE Electronics, Inc.	MOSFET N-CHANNEL 100V 28A TO220	664
NTE2920 NTE Electronics, Inc.	MOSFET N-CHANNEL 60V 70A TO3P	382
NTE491T NTE Electronics, Inc.	MOSFET N-CHANNEL 60V 310MA TO237	703
NTE2397 NTE Electronics, Inc.	MOSFET N-CHANNEL 400V 10A TO220	608
NTE2390 NTE Electronics, Inc.	MOSFET N-CHANNEL 60V 12A TO220	119
NTE2382 NTE Electronics, Inc.	MOSFET N-CHANNEL 100V 9.2A TO220	486
NTE222 NTE Electronics, Inc.	MOSFET N-CHANNEL 25V 50MA TO72	45
NTE67 NTE Electronics, Inc.	MOSFET N-CHANNEL 400V 4.5A TO220	140
NTE2373 NTE Electronics, Inc.	MOSFET P-CHANNEL 200V 11A TO220	136
NTE490 NTE Electronics, Inc.	MOSFET N-CHANNEL 60V 500MA AXIAL	543
NTE2389 NTE Electronics, Inc.	MOSFET N-CHANNEL 60V 35A TO220	190

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS